TY - CHAP U1 - Konferenzveröffentlichung A1 - Hackel, Jonathan A1 - Ebli, Michael A1 - Pfost, Martin T1 - A novel gate driver approach using an inductive feed forward for a robust turn-on of GaN power transistors with gate injection T2 - 2018 20th European Conference on Power Electronics and Applications (EPE '18 ECCE Europe) : 17-21 Sept. 2018 N2 - Many GaN power transistors contain a PN junction between gate and the channel region close to the source. In order to maintain the on-state, current must continuously be supplied to the junction. Therefore, the commonly recommended approach uses a gate bias voltage of 12V to compensate the Miller current through a boost circuit. For the same purpose, a novel gate driving method based on an inductive feed forward has been presented. With this, stable turn-on can be achieved even for a bias voltage of only 5V. The effectiveness of this concept is demonstrated by double pulse measurements, switching currents up to 27A and a voltage of 400V. For both approaches a compact design with low source inductance is characterized. In addition to the significant reduction of the gate bias voltage and peak gate current, the new approach reduces the switching losses for load currents >23 A. KW - discrete power device KW - efficiency KW - Gallium Nitride KW - high frequency power converter Y1 - 2018 UR - https://ieeexplore.ieee.org/document/8515622 SN - 978-90-75815-28-3 SB - 978-90-75815-28-3 SP - 1 EP - 6 S1 - 6 PB - IEEE CY - Piscataway, NJ ER -