TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Ebli, Michael
A1  - Wattenberg, Martin
A1  - Pfost, Martin
T1  - Performance of a GaN-HEMT synchronous boost converter in ZVS and hard switching mode
T2  - 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) : 05.-09.09.2016, Karlsruhe
N2  - The loss contribution of a 2.3kW synchronous GaN-HEMT boost converter for an input voltage of 250V and an output voltage of 500V was analyzed. A simulation model which consists of two parts is introduced. First, a physics-based model is used to determine the switching losses. Then, a system simulation is applied to calculate the losses of the specific elements. This approach allows a fast and accurate system evaluation as required for further system optimization.
In this work, a hard- and a zero-voltage turn-on switching converter are compared. Measurements were performed to verify the simulation model, showing a good agreement. A peak efficiency of 99% was achieved for an output power of 1.4kW. Even with an output power above 400W, it was possible to obtain a system efficiency exceeding 98 %.
KW  - converter circuit
KW  - converter control
KW  - discrete power device
KW  - efficiency
KW  - gallium nitride (GaN)
KW  - modelling
KW  - passive component
KW  - power semiconductor device
KW  - simulation
KW  - soft switching
KW  - wide bandgap devices
KW  - ZVS converters
Y1  - 2016
SN  - 978-9-0758-1524-5
SB  - 978-9-0758-1524-5
SN  - 978-9-0758-1525-2
SB  - 978-9-0758-1525-2
U6  - https://doi.org/10.1109/EPE.2016.7695422
DO  - https://doi.org/10.1109/EPE.2016.7695422
SP  - 8
S1  - 8
PB  - IEEE
CY  - Piscataway, NJ
ER  -