TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Mocanu, Manuela
A1  - Unger, Christian
A1  - Pfost, Martin
A1  - Waltereit, Patrick
A1  - Reiner, Richard
T1  - Thermal stability and failure mechanism of Schottky gate AlGaN/GaN HEMTs
JF  - IEEE transactions on electron devices
N2  - This paper investigates the electrothermal stability and the predominant defect mechanism of a Schottky gate AlGaN/GaN HEMT. Calibrated 3-D electrothermal simulations are performed using a simple semiempirical dc model, which is verified against high-temperature measurements up to 440°C. To determine the thermal limits of the safe operating area, measurements up to destruction are conducted at different operating points. The predominant failure mechanism is identified to be hot-spot formation and subsequent thermal runaway, induced by large drain–gate leakage currents that occur at high temperatures. The simulation results and the high temperature measurements confirm the observed failure patterns.
KW  - 3-D simulation
KW  - destructive measurements
KW  - drain–gate leakage
KW  - electrothermal
KW  - failure mechanism
KW  - high temperature
KW  - semiempirical dc model
KW  - AlGaN/GaN HEMTs
Y1  - 2017
SN  - 0018-9383
SS  - 0018-9383
U6  - https://doi.org/10.1109/TED.2016.2633725
DO  - https://doi.org/10.1109/TED.2016.2633725
VL  - 64
IS  - 3
SP  - 848
EP  - 855
S1  - 8
PB  - IEEE
CY  - New York, NY
ER  -