TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Seidel, Achim
A1  - Wicht, Bernhard
ED  - Fujino, Laura Chizuko
T1  - A 1.3A gate driver for GaN with fully integrated gate charge buffer capacitor delivering 11nC enabled by high-voltage energy storing
T2  - 2017 IEEE International Solid-State Circuits Conference : digest of technical papers
N2  - More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ~10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ~15V for Si.
Y1  - 2017
U6  - https://doi.org/10.1109/ISSCC.2017.7870446
DO  - https://doi.org/10.1109/ISSCC.2017.7870446
SP  - 432
EP  - 434
S1  - 3
PB  - IEEE
CY  - Piscataway, NJ
ER  -