TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Ritter, Matthias
A1  - Pfost, Martin
T1  - Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress
JF  - Microelectronics reliability
N2  - LDMOS transistors in integrated power technologies are often subject to thermo-mechanical stress, which degrades the on-chip metallization and eventually leads to a short. This paper investigates small sense lines embedded in the LDMOS metallization. It will be shown that their resistance depends strongly on the stress cycle number. Thus, they can be used as aging sensors and predict impending failures. Different test structures have been investigated to identify promising layout configurations. Such sensors are key components for resilient systems that adaptively reduce stress to allow aggressive LDMOS scaling without increasing the risk of failure.
KW  - aging sensor
KW  - on-chip metallization
KW  - LDMOS
KW  - thermomechanical stress
KW  - sense line
KW  - resistance change
KW  - resistance peak
KW  - metallization failure
Y1  - 2017
SN  - 0026-2714
SS  - 0026-2714
U6  - https://doi.org/10.1016/j.microrel.2017.06.009
DO  - https://doi.org/10.1016/j.microrel.2017.06.009
VL  - 76/77
SP  - 512
EP  - 516
S1  - 5
PB  - Elsevier
CY  - Amsterdam
ER  -