TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Unger, Christian
A1  - Mocanu, Manuela
A1  - Ebli, Michael
A1  - Pfost, Martin
T1  - A setup for very high temperature measurements of power semiconductors exceeding 500°C
T2  - 2015 International Semiconductor Conference : 38th edition, October 12 - 14, Sinaia, Romania
N2  - This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500°C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
KW  - high-temperature measurements
KW  - experimental results
KW  - silicon carbide
KW  - gallium nitride
KW  - drain leakage currents
KW  - on-state characteristics
Y1  - 2015
SN  - 978-1-4799-88623-1
SB  - 978-1-4799-88623-1
U6  - https://doi.org/10.1109/SMICND.2015.7355191
DO  - https://doi.org/10.1109/SMICND.2015.7355191
SP  - 149
EP  - 152
S1  - 4
PB  - IEEE
CY  - Piscataway, NJ
ER  -