TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Seidel, Achim
A1  - Costa, Marco
A1  - Joos, Joachim
A1  - Wicht, Bernhard
ED  - Andreani, Pietro
ED  - Bevilacqua, Andrea
ED  - Meneghesso, Gaudenzio
T1  - Bootstrap circuit with high-voltage charge storing for area efficient gate drivers in power management systems
T2  - ESSCIRC 2014 - 40th European Solid State Circuits Conference : Venice, Italy, 22 - 26 September 2014
N2  - Bootstrap circuits are mainly used for supplying a gate driver circuit to provide the gate overdrive voltage for a high-side NMOS transistor. The required charge has to be provided by a bootstrap capacitor which is often too large for integration if an acceptable voltage dip at the capacitor has to be guaranteed. Three options of an area efficient bootstrap circuit for a high side driver with an output stage of two NMOS transistors are proposed. The key idea is that the main bootstrap capacitor is supported by a second bootstrap capacitor, which is charged to a higher voltage and connected when the gate driver turns on. A high voltage swing at the second capacitor leads to a high charge allocation. Both bootstrap capacitors require up to 70% less area compared to a conventional bootstrap circuit. This enables compact power management systems with fewer discrete components and smaller die size. A calculation guideline for optimum bootstrap capacitor sizing is given. The circuit was manufactured in a 180nm high-voltage BiCMOS technology as part of a high-voltage gate driver. Measurements confirm the benefit of high-voltage charge storing. The fully integrated bootstrap circuit including two stacked 75.8pF and 18.9pF capacitors results in a voltage dip lower than 1V. This matches well with the theory of the calculation guideline.
KW  - bootstrap circuits
KW  - driver circuits
Y1  - 2014
SN  - 978-1-4799-5694-4
SB  - 978-1-4799-5694-4
U6  - https://doi.org/10.1109/ESSCIRC.2014.6942046
DO  - https://doi.org/10.1109/ESSCIRC.2014.6942046
SP  - 159
EP  - 162
S1  - 4
PB  - IEEE
CY  - Piscataway, NJ
ER  -