TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Wursthorn, Jonas
A1  - Herbert, Knapp
A1  - Wicht, Bernhard
ED  - Forster, Gerhard
T1  - A millimeter-wave power amplifier concept in SiGe BiCMOS technology for investigating HBT physical limitations
T2  - MPC / Multi-Projekt-Chip-Gruppe Baden-Württemberg : Tagungsband zum Workshop der Multiprojekt-Chip-Gruppe Baden-Württemberg ; 52. Workshop on Microelectronics, 11. Juli 2014, Hochschule Künzelsau, Germany
N2  - A millimeter-wave power amplifier concept in an advanced silicon germanium (SiGe) BiCMOS technology is presented. The goal of the concept is to investigate the impact of physical limitations of the used heterojunction bipolar transistors (HBT) on the performance of a 77 GHz power amplifier. High current behavior, collectorbase breakdown and transistor saturation can be forced with the presented design. The power amplifier is manufactured in an advanced SiGe BiCMOS technology at Infineon Technologies AG with a maximum transit frequency fT of around 250 GHz for npn HBT’s [1]. The simulation results of the power amplifier show a saturated output power of 16 dBm at a power added efficiency of 13%. The test chip is designed for a supply voltage of 3.3 V and requires a chip size of 1.448 x 0.930 mm².
KW  - millimeter-wave power amplifier
Y1  - 2014
U6  - https://nbn-resolving.org/urn:nbn:de:bsz:rt2-opus4-4313
UN  - https://nbn-resolving.org/urn:nbn:de:bsz:rt2-opus4-4313
UR  - https://www.mpc-gruppe.de/workshopbaende
SN  - 1868-9221
SS  - 1868-9221
SP  - 11
EP  - 14
S1  - 4
PB  - Hochschule Ulm
CY  - Ulm
ER  -