TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Hackel, Jonathan
A1  - Ebli, Michael
A1  - Pfost, Martin
T1  - A novel gate driving approach to balance the transient current of parallel-connected GaN-HEMTs
T2  - CIPS 2018 : 10th International Conference on Integrated Power Electronics Systems ; March, 20-22, 2018, Stuttgart, Germany
N2  - To enable higher current handling capability of GaN-based DC/DC converters, devices have to be used in parallel. However, their switching times differ, especially if their threshold voltages are not identical, which causes unbalanced device current. This paper focuses on the homogeneous distribution of turn-on switching losses of GaN-HEMTs connected in parallel. By applying a new gate driver concept, the transient current is distributed evenly. The effectiveness of this concept is demonstrated by double pulse measurements, for switching currents up to 45A and a voltage of 400V. A uniform current distribution is achieved, including a reduction of the turn-on losses by 50% compared to a conventional setup.
Y1  - 2018
UR  - https://ieeexplore.ieee.org/document/8403150
SN  - 978-3-8007-4540-1
SB  - 978-3-8007-4540-1
SP  - 305
EP  - 308
S1  - 4
PB  - VDE Verlag
CY  - Berlin ; Offenbach
ER  -