TY - JOUR U1 - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed) A1 - Seidel, Achim A1 - Wicht, Bernhard T1 - Integrated gate drivers based on high-voltage energy storing for GaN transistors JF - IEEE journal of solid state circuits N2 - This paper presents a fully integrated gate driver in a 180-nm bipolar CMOS DMOS (BCD) technology with 1.5-A max. gate current, suitable for normally OFF gallium nitride (GaN) power switches, including gate-injection transistors (GIT). Full-bridge driver architecture provides a bipolar and three-level gate drive voltage for a robust and efficient GaN switching. The concept of high voltage energy storing (HVES), which comprises an on-chip resonant LC tank, enables a very area-efficient buffer capacitor integration and superior gatedriving speed. It reduces the component count and the influence of parasitic gate-loop inductance. Theory and calculations confirm the benefits of HVES compared to other capacitor implementation methods. The proposed gate driver delivers a gate charge of up to 11.6 nC, sufficient to drive most types of currently available GaN power transistors. Consequently, HVES enables to utilize the fast switching capabilities of GaN for advanced and compact power electronics. KW - bootstrap circuit KW - capacitor integration KW - charge pump (CP) KW - gallium nitride (GaN) transistor KW - gate drive speed KW - gate driver supply KW - gate driver KW - gate-injection transistor (GIT) KW - resonant gate driver Y1 - 2018 SN - 0018-9200 SS - 0018-9200 U6 - https://doi.org/10.1109/JSSC.2018.2866948 DO - https://doi.org/10.1109/JSSC.2018.2866948 VL - 53 IS - 12 SP - 3446 EP - 3454 S1 - 9 PB - IEEE CY - New York, NY ER -