TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Ritter, Matthias
A1  - Pfost, Martin
T1  - Resistance change in on-chip aluminum interconnects under cyclic thermo-mechanical stress
JF  - Microelectronics reliability
N2  - On-chip metallization, especially in modern integrated BCD technologies, is often subject to high current densities and pronounced temperature cycles due to heat dissipation from power switches like LDMOS transistors. This paper continues the work on a sensor concept where small sense lines are embedded in the metallization layers above the active area of a switching LDMOS transistor. The sensors show a significant resistance change that correlates with the number of power cycles. Furthermore, influences of sense line layer, geometry and the dissipated energy are shown. In this paper, the focus lies on a more detailed analysis of the observed change in sense line resistance.
Y1  - 2019
SN  - 0026-2714
SS  - 0026-2714
U6  - https://doi.org/10.1016/j.microrel.2019.06.013
DO  - https://doi.org/10.1016/j.microrel.2019.06.013
VL  - 100/101
IS  - Aufsatz 113221
SP  - 1
EP  - 5
S1  - 5
PB  - Elsevier
CY  - Amsterdam
ER  -