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Resistance change in on-chip aluminum interconnects under cyclic thermo-mechanical stress

  • On-chip metallization, especially in modern integrated BCD technologies, is often subject to high current densities and pronounced temperature cycles due to heat dissipation from power switches like LDMOS transistors. This paper continues the work on a sensor concept where small sense lines are embedded in the metallization layers above the active area of a switching LDMOS transistor. The sensors show a significant resistance change that correlates with the number of power cycles. Furthermore, influences of sense line layer, geometry and the dissipated energy are shown. In this paper, the focus lies on a more detailed analysis of the observed change in sense line resistance.

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Metadaten
Author of HS ReutlingenRitter, Matthias; Pfost, Martin
DOI:https://doi.org/10.1016/j.microrel.2019.06.013
ISSN:0026-2714
eISSN:1872-941X
Erschienen in:Microelectronics reliability
Publisher:Elsevier
Place of publication:Amsterdam
Document Type:Journal article
Language:English
Publication year:2019
Volume:100/101
Issue:Aufsatz 113221
Page Number:5
First Page:1
Last Page:5
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt