Volltext-Downloads (blau) und Frontdoor-Views (grau)
The search result changed since you submitted your search request. Documents might be displayed in a different sort order.
  • search hit 38 of 302
Back to Result List

Thermal stability and failure mechanism of Schottky gate AlGaN/GaN HEMTs

  • This paper investigates the electrothermal stability and the predominant defect mechanism of a Schottky gate AlGaN/GaN HEMT. Calibrated 3-D electrothermal simulations are performed using a simple semiempirical dc model, which is verified against high-temperature measurements up to 440°C. To determine the thermal limits of the safe operating area, measurements up to destruction are conducted at different operating points. The predominant failure mechanism is identified to be hot-spot formation and subsequent thermal runaway, induced by large drain–gate leakage currents that occur at high temperatures. The simulation results and the high temperature measurements confirm the observed failure patterns.

Download full text files

  • 1262.pdf
    eng

Export metadata

Additional Services

Search Google Scholar

Statistics

frontdoor_oas
Metadaten
Author of HS ReutlingenMocanu, Manuela; Pfost, Martin
DOI:https://doi.org/10.1109/TED.2016.2633725
ISSN:0018-9383
eISSN:1557-9646
Erschienen in:IEEE transactions on electron devices
Publisher:IEEE
Place of publication:New York, NY
Document Type:Journal article
Language:English
Publication year:2017
Tag:3-D simulation; AlGaN/GaN HEMTs; destructive measurements; drain–gate leakage; electrothermal; failure mechanism; high temperature; semiempirical dc model
Volume:64
Issue:3
Page Number:8
First Page:848
Last Page:855
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt