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A new method for the analysis of movement dependent parasitics in full custom designed MEMS sensors

  • Due to the lack of sophisticated microelectromechanical systems (MEMS) component libraries, highly optimized MEMS sensors are currently designed using a polygon driven design flow. The strength of this design flow is the accurate mechanical simulation of the polygons by finite element (FE) modal analysis. The result of the FE-modal analysis is included in the system model together with the data of the (mechanical) static electrostatic analysis. However, the system model lacks the dynamic parasitic electrostatic effects, arising from the electric coupling between the wiring and the moving structures. In order to include these effects in the system model, we present a method which enables the quasi dynamic parasitic extraction with respect to in-plane movements of the sensor structures. The method is embedded in the polygon driven MEMS design flow using standard EDA tools. In order to take the influences of the fabrication process into account, such as etching process variations, the method combines the FE-modal analysis and the fabrication process simulation data. This enables the analysis of dynamic changing electrostatic parasitic effects with respect to movements of the mechanical structures. Additionally, the result can be included into the system model allowing the simulation of positive feedback of the electrostatic parasitic effects to the mechanical structures.

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Metadaten
Author of HS ReutlingenScheible, Jürgen
DOI:https://doi.org/10.1109/SMACD.2017.7981568
ISBN:978-1-5090-5052-9
Erschienen in:SMACD 2017 : 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design : 12th - 15th June 2017, Giardini Naxos, Taormina, Italy
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Language:English
Publication year:2017
Page Number:4
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt