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Pulse robustness of AlGaN/GaN HEMTs with Schottky- and MIS-Gates

  • In this work we investigate the behavior of MIS- and Schottky-gate AlGaN/GaN HEMTs under high-power pulsestress. A special setup capable of applying pulses of constant power is used to evaluate the electro-thermal response in different operating points. For both types of devices, the time to failure was found to decrease with increasing drain-source voltage. Overall, the Schottky-gate device displays a higher pulse robustness. The pulse withstand time of the MIS-gate device is limited by the occurrence of a thermal instability at approximately 240°C while the Schottky-gate device displays a rapid increase of the gate leakage current prior to failure. The mechanism responsible for this gate current is further investigated by static and transient temperature measurements and yielded activation energies of 0.6 eV and 0.84 eV.

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Metadaten
Author of HS ReutlingenMocanu, Manuela; Pfost, Martin
DOI:https://doi.org/10.23919/ISPSD.2017.7988915
ISBN:978-4-88686-096-5
Erschienen in:ISPDS 2017 : proceedings of the 29th International Symposium on Power Semiconductor Devices & ICs : May 28-June 1, 2017, Royton Sapporo, Sapporo, Japan
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference Proceeding
Language:English
Year of Publication:2017
Page Number:4
First Page:451
Last Page:454
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open Access?:Nein
Licence (German):License Logo  Lizenzbedingungen IEEE