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Efficient simulation of thermo-mechanical stress in the on-chip metallization of integrated power semiconductors

  • Integrated power semiconductors are often used for applications with cyclic on-chip power dissipation. This leads to repetitive self-heating and thermo-mechanical stress, causing fatigue on the on-chip metallization and possibly destruction by short circuits. Because of this, an accurate simulation of the thermo-mechanical stress is needed already during the design phase to ensure that lifetime requirements are met. However, a detailed thermo mechanical simulation of the device, including the on-chip metallization is prohibitively time-consuming due to its complex structure, typically consisting of many thin metal lines with thousands of vias. This paper introduces a two-step approach as a solution for this problem. First, a simplified but fast simulation is performed to identify the device parts with the highest stress. After, precise simulations are carried out only for them. The applicability of this method is verified experimentally for LDMOS transistors with different metal configurations. The measured lifetimes and failure locations correlate well with the simulations. Moreover, a strong influence of the layout of the on-chip metallization lifetime was observed. This could also be explained with the simulation method.

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Metadaten
Author of HS ReutlingenPham, Gimi; Ritter, Matthias; Pfost, Martin
DOI:https://doi.org/10.1109/TDMR.2017.2672743
ISSN:1530-4388
eISSN:1558-2574
Erschienen in:IEEE transactions on device and materials reliability
Publisher:IEEE
Place of publication:New York, NY
Document Type:Journal article
Language:English
Publication year:2017
Tag:degradation; integrated circuit modelling; integrated power technologies; on-chip metallization; power semiconductor devices; reliability; thermo-mechanical stress
Volume:17
Issue:2
Page Number:9
First Page:307
Last Page:315
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt