A low-impedance TLP measurement system for power semiconductor characterization up to 700 V and 400 A in the microsecond range
- A TLP system with a very low characteristic impedance of 1.5 Ω and a selectable pulse length from 0.5 to 6 μs is presented. It covers the entire operation region of many power semiconductors up to 700 V and 400 A. Ist applicability is demonstrated by determining the Output characteristics for two Cool MOS devices up to destruction.
| Author of HS Reutlingen | Cretu, Gabriel; Cenusa, Marius; Pfost, Martin |
|---|---|
| DOI: | https://doi.org/10.1109/EOSESD.2015.7314794 |
| ISBN: | 978-1-4799-8895-2 |
| Erschienen in: | 2015 37th Electrical Overstress Electrostatic Discharge Symposium (EOS/ESD) ; Sept. 27, 2015 - Oct. 2, 2015, Reno, NV |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2015 |
| Page Number: | 7 |
| DDC classes: | 537 Elektrizität, Elektronik |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
