Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs
- This work investigates the electro-thermal behavior and failure mechanism of a 600V depletion-mode GaN HEMT by experimental analysis and numerical thermal simulations. For this device, the positive temperature coefficient of the draingate leakage current can lead to the formation of hot spots. This localized thermal runaway which ultimately results in a breakdown of the inherent drain-gate junction is found to be the dominant cause of failure.
| Author of HS Reutlingen | Unger, Christian; Pfost, Martin |
|---|---|
| DOI: | https://doi.org/10.1109/SMICND.2016.7783060 |
| ISBN: | 978-1-5090-1207-7 |
| Erschienen in: | 2016 International Semiconductor Conference ; 39th edition, October 10-12, Sinaia, Romania : CAS 2016 proceedings |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2016 |
| Tag: | AlGaN/GaN; HEMT; defect mechanism; gate leakage; high temperature; hot spot; meander; pulsed measurements; temperature sensor; thermal simulations |
| Page Number: | 4 |
| First Page: | 127 |
| Last Page: | 130 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
