Volltext-Downloads (blau) und Frontdoor-Views (grau)
The search result changed since you submitted your search request. Documents might be displayed in a different sort order.
  • search hit 4 of 44
Back to Result List

Characterization and modeling of self-heating in DMOS transistors

  • Advanced power semiconductors such as DMOS transistors are key components of modern power electronic systems. Recent discrete and integrated DMOS technologies have very low area-specific on-state resistances so that devices with small sizes can be chosen. However, their power dissipation can sometimes be large, for example in fault conditions, causing the device temperature to rise significantly. This can lead to excessive temperatures, reduced lifetime, and possibly even thermal runaway and subsequent destruction. Therefore, it is required to ensure already in the design phase that the temperature always remains in an acceptable range. This paper will show how self-heating in DMOS transistors can be experimentally determined with high accuracy. Further, it will be discussed how numerical electrothermal simulations can be carried out efficiently, allowing the accurate assessment of self-heating within a few minutes. The presented approach has been successfully verified experimentally for device temperatures exceeding 500 ◦C up to the onset of thermal runaway.

Download full text files

  • 326.pdf
    eng

Export metadata

Additional Services

Search Google Scholar

Statistics

frontdoor_oas
Metadaten
Author of HS ReutlingenPfost, Martin
DOI:https://doi.org/10.1109/SMICND.2014.6966378
ISBN:978-1-4799-3916-9
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Language:English
Publication year:2014
Tag:numerical analysis; semiconductor device models; semiconductor device reliability
Page Number:8
First Page:3
Last Page:10
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt