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A setup for very high temperature measurements of power semiconductors exceeding 500°C

  • This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500°C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.

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Metadaten
Author of HS ReutlingenUnger, Christian; Mocanu, Manuela; Ebli, Michael; Pfost, Martin
DOI:https://doi.org/10.1109/SMICND.2015.7355191
ISBN:978-1-4799-88623-1
Erschienen in:2015 International Semiconductor Conference : 38th edition, October 12 - 14, Sinaia, Romania
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Language:English
Publication year:2015
Tag:drain leakage currents; experimental results; gallium nitride; high-temperature measurements; on-state characteristics; silicon carbide
Page Number:4
First Page:149
Last Page:152
DDC classes:537 Elektrizität, Elektronik
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt