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Influence of the on-chip metallization on self-heating in integrated power technologies

  • DMOS transistors in integrated power technologies are often subject to significant self-heating and thus high temperatures, which can lead to device failure and reduced lifetime. Hence, it must be ensured that the device temperature does not rise too much. For this, the influence of the on-chip metallization must be taken into account because of the good thermal conductivity and significant thermal capacitance of the metal layers on top of the active DMOS area. In this paper, test structures with different metal layers and vias configurations are presented that can be used to determine the influence of the onchip metallization on the temperature caused by self-heating. It will be shown how accurate results can be obtained to determine even the influence of small changes in the metallization. The measurement results are discussed and explained, showing how on-chip metallization helps to lower the device temperature. This is further supported by numerical simulations. The obtained insights are valuable for technology optimization, but are also useful for calibration of temperature simulators.

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Metadaten
Author of HS ReutlingenPfost, Martin
DOI:https://doi.org/10.1109/TSM.2014.2306683
ISSN:0894-6507
eISSN:1558-2345
Erschienen in:IEEE transactions on semiconductor manufacturing
Publisher:IEEE
Place of publication:New York, NY
Document Type:Article
Language:English
Year of Publication:2014
Tag:integrated power technologies; metallization; power semiconductor devices; self-heating; temperature measurement
Volume:27
Issue:2
Page Number:9
First Page:169
Last Page:177
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open Access?:Nein
Licence (German):License Logo  Lizenzbedingungen IEEE