An improved method of controlling IGBT modules using an optimized gate current waveform
- IGBT modules with anti-parallel FWDs are widely used in inductive load switching power applications, such as motor drive applications. Nowadays there is a continuous effort to increase the efficiency of such systems by decreasing their switching losses. This paper addresses the problems arising in the turn-on process of an IGBT working in hard-switching conditions. A method is proposed which achieves – contrary to most other approaches – a high switching speed and, at the same time, a low peak reverse-recovery current. This is done by applying an improved gate current waveform that is briefly lowered during the turn-on process. The proposed method achieves low switching losses. Its effectiveness is demonstrated by experimental results with IGBT modules for 600V and 1200V.
| Author of HS Reutlingen | Pfost, Martin |
|---|---|
| ISBN: | 978-3-8007-3578-5 |
| Publisher: | VDE-Verlag |
| Place of publication: | Berlin |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2014 |
| Page Number: | 6 |
| First Page: | 151 |
| Last Page: | 156 |
| DDC classes: | 621 Angewandte Physik |
| Open access?: | Nein |
