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An improved method of controlling IGBT modules using an optimized gate current waveform

  • IGBT modules with anti-parallel FWDs are widely used in inductive load switching power applications, such as motor drive applications. Nowadays there is a continuous effort to increase the efficiency of such systems by decreasing their switching losses. This paper addresses the problems arising in the turn-on process of an IGBT working in hard-switching conditions. A method is proposed which achieves – contrary to most other approaches – a high switching speed and, at the same time, a low peak reverse-recovery current. This is done by applying an improved gate current waveform that is briefly lowered during the turn-on process. The proposed method achieves low switching losses. Its effectiveness is demonstrated by experimental results with IGBT modules for 600V and 1200V.

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Author of HS ReutlingenPfost, Martin
Publisher:VDE Verlag
Place of publication:Berlin
Document Type:Conference proceeding
Publication year:2014
Page Number:6
First Page:151
Last Page:156
DDC classes:621 Angewandte Physik
Open access?:Nein