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A millimeter-wave power amplifier concept in SiGe BiCMOS technology for investigating HBT physical limitations

  • A millimeter-wave power amplifier concept in an advanced silicon germanium (SiGe) BiCMOS technology is presented. The goal of the concept is to investigate the impact of physical limitations of the used heterojunction bipolar transistors (HBT) on the performance of a 77 GHz power amplifier. High current behavior, collectorbase breakdown and transistor saturation can be forced with the presented design. The power amplifier is manufactured in an advanced SiGe BiCMOS technology at Infineon Technologies AG with a maximum transit frequency fT of around 250 GHz for npn HBT’s [1]. The simulation results of the power amplifier show a saturated output power of 16 dBm at a power added efficiency of 13%. The test chip is designed for a supply voltage of 3.3 V and requires a chip size of 1.448 x 0.930 mm².

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Author of HS ReutlingenWicht, Bernhard
Erschienen in:MPC / Multi-Projekt-Chip-Gruppe Baden-Württemberg : Tagungsband zum Workshop der Multiprojekt-Chip-Gruppe Baden-Württemberg ; 52. Workshop on Microelectronics, 11. Juli 2014, Hochschule Künzelsau, Germany
Publisher:Hochschule Ulm
Place of publication:Ulm
Editor:Gerhard Forster
Document Type:Conference proceeding
Publication year:2014
Tag:millimeter-wave power amplifier
Page Number:4
First Page:11
Last Page:14
DDC classes:621 Angewandte Physik
Open access?:Ja
Licence (German):License Logo  Open Access