A setup for very high temperature measurements of power semiconductors exceeding 500°C
- This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500°C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
Author of HS Reutlingen | Unger, Christian; Mocanu, Manuela; Ebli, Michael; Pfost, Martin |
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DOI: | https://doi.org/10.1109/SMICND.2015.7355191 |
ISBN: | 978-1-4799-88623-1 |
Erschienen in: | 2015 International Semiconductor Conference : 38th edition, October 12 - 14, Sinaia, Romania |
Publisher: | IEEE |
Place of publication: | Piscataway, NJ |
Document Type: | Conference proceeding |
Language: | English |
Publication year: | 2015 |
Tag: | drain leakage currents; experimental results; gallium nitride; high-temperature measurements; on-state characteristics; silicon carbide |
Page Number: | 4 |
First Page: | 149 |
Last Page: | 152 |
DDC classes: | 537 Elektrizität, Elektronik |
Open access?: | Nein |
Licence (German): | ![]() |