A setup for very high temperature measurements of power semiconductors exceeding 500°C
- This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500°C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
| Author of HS Reutlingen | Unger, Christian; Mocanu, Manuela; Ebli, Michael; Pfost, Martin |
|---|---|
| DOI: | https://doi.org/10.1109/SMICND.2015.7355191 |
| ISBN: | 978-1-4799-88623-1 |
| Erschienen in: | 2015 International Semiconductor Conference : 38th edition, October 12 - 14, Sinaia, Romania |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2015 |
| Tag: | drain leakage currents; experimental results; gallium nitride; high-temperature measurements; on-state characteristics; silicon carbide |
| Page Number: | 4 |
| First Page: | 149 |
| Last Page: | 152 |
| DDC classes: | 537 Elektrizität, Elektronik |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
