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A low-impedance TLP measurement system for power semiconductor characterization up to 700 V and 400 A in the microsecond range

  • A TLP system with a very low characteristic impedance of 1.5 Ω and a selectable pulse length from 0.5 to 6 μs is presented. It covers the entire operation region of many power semiconductors up to 700 V and 400 A. Ist applicability is demonstrated by determining the Output characteristics for two Cool MOS devices up to destruction.

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Metadaten
Author of HS ReutlingenCretu, Gabriel; Cenusa, Marius; Pfost, Martin
DOI:https://doi.org/10.1109/EOSESD.2015.7314794
ISBN:978-1-4799-8895-2
Erschienen in:2015 37th Electrical Overstress Electrostatic Discharge Symposium (EOS/ESD) ; Sept. 27, 2015 - Oct. 2, 2015, Reno, NV
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Language:English
Publication year:2015
Page Number:7
DDC classes:537 Elektrizität, Elektronik
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt