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EMC and switching loss improvement for fast switching power stages by di/dt, dv/dt optimization with 10ns variable current source gate driver

  • There is a growing need for motor drives with improved EMC in various automotive and industrial applications. An often referenced approach to reduce EME is to change the shape of the switching signal to reduce the EMI caused by the voltage and current transitions. This requires very precise gate control of the power MOSFET to achive better switching behaviour and lower EME without a major increase in switching losses. In order to find an optimal trade-off, this work utilizes a monolithic current mode gate driver with a variable output current that can be changed within 10ns. With this driver, measurements with different gate current profiles were taken. The di/dt transition was confirmed to be as important as the dv/dt transition in the power MOSFET. As a result of the improved switching behavior the emissions were reduced by up to 20dB between 7MHz and 60MHz with a switching loss that is 52% lower than with a constantly low gate current.

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Author of HS ReutlingenSchindler, Alexis; Wicht, Bernhard
Erschienen in:Proc. of the 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo), Edinburgh, UK, 10 – 13 November 2015
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Publication year:2015
Page Number:6
First Page:18
Last Page:23
DDC classes:621 Angewandte Physik
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt