A high-efficiency bidirectional GaN-HEMT DC/DC converter
- This paper presents a compact 3 kW bidirectional GaN-HEMT DC/DC converter for 360V to 400-500 V. A very high efficiency has been reached by applying a zero voltage turn-on in conjunction with a negative gate-source voltage, even though normally-off HEMTs are used. Further improvements were achieved by adapting the switching frequency to the load current and output voltage, as will be explained by means of the loss contribution of the specific elements for a constant and an adaptive switching frequency. Measurements have shown a high converter efficiency exceeding 99% over a wide output power range of up to 3 kW.
| Author of HS Reutlingen | Ebli, Michael; Wattenberg, Martin; Pfost, Martin |
|---|---|
| URL: | http://ieeexplore.ieee.org/document/7499360/ |
| Erschienen in: | PCIM Europe 2016 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management : 10 - 12 May 2016, Nuremberg, Germany |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2016 |
| Page Number: | 6 |
| First Page: | 210 |
| Last Page: | 215 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
