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Performance of a GaN-HEMT synchronous boost converter in ZVS and hard switching mode

  • The loss contribution of a 2.3kW synchronous GaN-HEMT boost converter for an input voltage of 250V and an output voltage of 500V was analyzed. A simulation model which consists of two parts is introduced. First, a physics-based model is used to determine the switching losses. Then, a system simulation is applied to calculate the losses of the specific elements. This approach allows a fast and accurate system evaluation as required for further system optimization. In this work, a hard- and a zero-voltage turn-on switching converter are compared. Measurements were performed to verify the simulation model, showing a good agreement. A peak efficiency of 99% was achieved for an output power of 1.4kW. Even with an output power above 400W, it was possible to obtain a system efficiency exceeding 98 %.

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Author of HS ReutlingenEbli, Michael; Wattenberg, Martin; Pfost, Martin
Erschienen in:18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) : 05.-09.09.2016, Karlsruhe
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Publication year:2016
Tag:ZVS converters; converter circuit; converter control; discrete power device; efficiency; gallium nitride (GaN); modelling; passive component; power semiconductor device; simulation; soft switching; wide bandgap devices
Page Number:8
PPN:Im Katalog der Hochschule Reutlingen ansehen
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt