Performance of a GaN-HEMT synchronous boost converter in ZVS and hard switching mode
- The loss contribution of a 2.3kW synchronous GaN-HEMT boost converter for an input voltage of 250V and an output voltage of 500V was analyzed. A simulation model which consists of two parts is introduced. First, a physics-based model is used to determine the switching losses. Then, a system simulation is applied to calculate the losses of the specific elements. This approach allows a fast and accurate system evaluation as required for further system optimization. In this work, a hard- and a zero-voltage turn-on switching converter are compared. Measurements were performed to verify the simulation model, showing a good agreement. A peak efficiency of 99% was achieved for an output power of 1.4kW. Even with an output power above 400W, it was possible to obtain a system efficiency exceeding 98 %.
| Author of HS Reutlingen | Ebli, Michael; Wattenberg, Martin; Pfost, Martin |
|---|---|
| DOI: | https://doi.org/10.1109/EPE.2016.7695422 |
| ISBN: | 978-9-0758-1524-5 |
| ISBN: | 978-9-0758-1525-2 |
| Erschienen in: | 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) : 05.-09.09.2016, Karlsruhe |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2016 |
| Tag: | ZVS converters; converter circuit; converter control; discrete power device; efficiency; gallium nitride (GaN); modelling; passive component; power semiconductor device; simulation; soft switching; wide bandgap devices |
| Page Number: | 8 |
| PPN: | Im Katalog der Hochschule Reutlingen ansehen |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
