Open Access

Gimi Pham, Matthias RitterORCiD, Martin PfostORCiD

• The influence of the layout on early warning detectors in BCD technologies for metallization failure under cyclic thermo-mechanical stress was investigated. Different LDMOS transistors, with narrow or wide metal fingers and with or without embedded detectors, were used. The test structures were repeatedly stressed by pronounced self-heating until failure (a short circuit) was detected. The results show that the layout of the on-chip metallization has a large impact on the lifetime. A significant influence of the detectors on the lifetime was also observed, in our case causing a reduction of more than a factor of two, but only for the test structure with narrow metal fingers. The experimental results are explained by an efficient numerical thermo mechanical simulation approach, giving detailed insights into the strain distribution in the metal system. These results are important for aging detector design and, morever, for LDMOS on-chip metal layout in general.