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Influence of metallization layout on aging detector lifetime under cyclic thermo-mechanical stress

  • The influence of the layout on early warning detectors in BCD technologies for metallization failure under cyclic thermo-mechanical stress was investigated. Different LDMOS transistors, with narrow or wide metal fingers and with or without embedded detectors, were used. The test structures were repeatedly stressed by pronounced self-heating until failure (a short circuit) was detected. The results show that the layout of the on-chip metallization has a large impact on the lifetime. A significant influence of the detectors on the lifetime was also observed, in our case causing a reduction of more than a factor of two, but only for the test structure with narrow metal fingers. The experimental results are explained by an efficient numerical thermo mechanical simulation approach, giving detailed insights into the strain distribution in the metal system. These results are important for aging detector design and, morever, for LDMOS on-chip metal layout in general.

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Metadaten
Author of HS ReutlingenPham, Gimi; Ritter, Matthias; Pfost, Martin
DOI:https://doi.org/10.1109/IRPS.2016.7574551
Erschienen in:IEEE International Reliability Physics Symposium (IRPS 2016) : Proceedings of a meeting held 17 - 21 April 2016, Pasadena, California, USA
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Language:English
Publication year:2016
Tag:degradation; integrated circuit modelling; integrated power technologies; on-chip metallization; power semiconductor devices; reliability; thermo-mechanical stress
Page Number:6
First Page:5B-5-1
Last Page:5B-5-6
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt