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High-voltage fast-switching gate drivers

  • This article covers the design of highly integrated gate drivers and level shifters for high-speed, high power efficiency and dv/dt robustness with focus on automotive applications. With the introduction of the 48 V board net in addition to the conventional 12 V battery, there is an increasing need for fast switching integrated gate drivers in the voltage range of 50 V and above. State-of-the-art drivers are able to switch 50 V in less than 5 ns. The high-voltage electrical drive train demands for galvanic isolated and highly integrated gate drivers. A gate driver with bidirectional signal transmission with a 1 MBit/s amplitude modulation, 10/20 MHz frequency modulation and power transfer over one single transformer will be discussed. The concept of high-voltage charge storing enables an area-efficient fully integrated bootstrapping supply with 70 % less area consumption. EMC is a major concern in automotive. Gate drivers with slope control optimize EMC while maintaining good switching efficiency. A current mode gate driver, which can change its drive current within 10 ns, results in 20 dBuV lower emissions between 7 and 60 MHz and 52 % lower switching loss compared to a conventional constant current gate driver.

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Metadaten
Author of HS ReutlingenWicht, Bernhard; Wittmann, Jürgen; Seidel, Achim; Schindler, Alexis
DOI:https://doi.org/10.1007/978-3-319-41670-0_9
ISBN:978-3-319-41670-0
Erschienen in:Wideband continuous-time ΣΔ ADCs, automotive electronics, and power management : advances in analog circuit design 2016
Publisher:Springer
Place of publication:Cham
Editor:Andrea Baschirotto
Document Type:Book chapter
Language:English
Publication year:2017
Page Number:23
First Page:155
Last Page:176
PPN:Im Katalog der Hochschule Reutlingen ansehen
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt