Thermal stability and failure mechanism of Schottky gate AlGaN/GaN HEMTs
- This paper investigates the electrothermal stability and the predominant defect mechanism of a Schottky gate AlGaN/GaN HEMT. Calibrated 3-D electrothermal simulations are performed using a simple semiempirical dc model, which is verified against high-temperature measurements up to 440°C. To determine the thermal limits of the safe operating area, measurements up to destruction are conducted at different operating points. The predominant failure mechanism is identified to be hot-spot formation and subsequent thermal runaway, induced by large drain–gate leakage currents that occur at high temperatures. The simulation results and the high temperature measurements confirm the observed failure patterns.
| Author of HS Reutlingen | Mocanu, Manuela; Pfost, Martin |
|---|---|
| DOI: | https://doi.org/10.1109/TED.2016.2633725 |
| ISSN: | 0018-9383 |
| eISSN: | 1557-9646 |
| Published in: | IEEE transactions on electron devices |
| Publisher: | IEEE |
| Place of publication: | New York, NY |
| Document Type: | Journal article |
| Language: | English |
| Publication year: | 2017 |
| Tag: | 3-D simulation; AlGaN/GaN HEMTs; destructive measurements; drain–gate leakage; electrothermal; failure mechanism; high temperature; semiempirical dc model |
| Volume: | 64 |
| Issue: | 3 |
| Page Number: | 8 |
| First Page: | 848 |
| Last Page: | 855 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
