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Adaptive, iterative closed-loop control for the turn-on of IGBTs with improved efficiency

  • This paper addresses the turn-on switching process of insulated-gate bipolar transistor (IGBT) modules with anti-parallel free-wheeling diodes (FWD) used in inductive load switching power applications. An increase in efficiency, i.e. decrease in switching losses, calls for a fast switching process of the IGBT, but this commonly implies high values of the reverse-recovery current overshoot. To overcome this undesired behaviour, a solution was proposed which achieves an independent control of the collector current slope and peak reverse recovery current by applying a gate current that is briefly turned negative during the turn-on process. The feasibility of this approach has already been shown, however, a sophisticated control method is required for applying it in applications with varying currents, temperature and device parameters. In this paper a solution based on an adaptive, iterative closed-loop ontrol is proposed. Its effectiveness is demonstrated by experimental results from a 1200 V/200A IGBT power module for different load currents and reverse-recovery current overshoots.

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Author of HS ReutlingenCenusa, Marius; Cretu, Gabriel; Pfost, Martin
Erschienen in:CIPS 2016, 9th International Conference on Integrated Power Electronics Systems : proceedings, March, 8-10, 2016, Nuremberg, Germany
Publisher:VDE Verlag
Place of publication:Berlin ; Offenbach
Document Type:Conference proceeding
Publication year:2016
Page Number:6
First Page:1
Last Page:6
DDC classes:621 Angewandte Physik
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt