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A novel gate driver approach using inductive feedback to increase the switching speed of power semiconductor devices

  • Modern power semiconductor devices have low capacitances and can therefore achieve very fast switching transients under hard-switching conditions. However, these transients are often limited by parasitic elements, especially by the source inductance and the parasitic capacitances of the power semiconductor. These limitations cannot be compensated by conventional gate drivers. To overcome this, a novel gate driver approach for power semiconductors was developed. It uses a transformer which accelerates the switching by transferring energy from the source path to the gate path. Experimental results of the novel gate driver approach show a turn-on energy reduction of 78% (from 80 μJ down to 17 μJ) with a drain-source voltage of 500V and a drain current of 60 A. Furthermore, the efficiency improvement is demonstrated for a hard-switching boost converter. For a switching frequency of 750 kHz with an input voltage of 230V and an output voltage of 400V, it was possible to extend the output power range by 35%(from 2.3kW to 3.1 kW), due to the reduction of the turn-on losses, therefore lowering the junction temperature of the GaN-HEMT.

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Metadaten
Author of HS ReutlingenEbli, Michael; Pfost, Martin
DOI:https://doi.org/10.23919/EPE17ECCEEurope.2017.8099152
ISBN:978-90-75815-27-6
Erschienen in:2017 19th European Conference on Power Electronics and Applications (EPE '17 ECCE Europe) : 11-14 Sept. 2017
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Language:English
Publication year:2017
Tag:Gallium Nitride; discrete power device; efficiency; high frequency power converter
Page Number:7
First Page:1
Last Page:7
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt