An analysis of the switching behavior of GaN-HEMTs
- Gallium nitride high electron mobility transistors (GaN-HEMTs) have low capacitances and can achieve low switching losses in applications where hard turn-on is required. Low switching losses imply a fast switching; consequently, fast voltage and current transients occur. However, these transients can be limited by package and layout parasitics even for highly optimized systems. Furthermore, a fast switching requires a fast charging of the input capacitance, hence a high gate current. In this paper, the switching speed limitations of GaN-HEMTs due to the common source inductance and the gate driver supply voltage are discussed. The turn-on behavior of a GaN-HEMT is simulated and the impact of the parasitics and the gate driver supply voltage on the switching losses is described in detail. Furthermore, measurements are performed with an optimized layout for a drain-source voltage of 500 V and a drain-source current up to 60 A.
| Author of HS Reutlingen | Ebli, Michael; Pfost, Martin |
|---|---|
| DOI: | https://doi.org/10.1109/ISSCS.2017.8034939 |
| ISBN: | 978-1-5386-0674-2 |
| Erschienen in: | International Symposium on Signals, Circuits and Systems - ISSCS 2017, July 13-14, Iasi, Romania |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2017 |
| Page Number: | 4 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
