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A ramped-gate voltage sensing scheme for embedded multilevel flash in automotive

  • Multilevel-cell (MLC) flash is commonly deployed in today’s high density NAND memories, but low latency and high reliability requirements make it barely used in automotive embedded flash applications. This paper presents a time domain voltage sensing scheme that applies a dynamic voltage ramp at the cells’ control gate (CG) in order to achieve fast and reliable sensing suitable for automotive applications.

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Author of HS ReutlingenWicht, Bernhard
Erschienen in:Analog Workshop 2017 : March 2-3, 2017, Technische Universität Berlin
Publisher:Technische Universität Berlin
Place of publication:Berlin
Editor:Friedel Gerfers
Document Type:Conference proceeding
Publication year:2017
Page Number:1
First Page:11
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Ja
Licence (German):License Logo  Open Access