A ramped-gate voltage sensing scheme for embedded multilevel flash in automotive
- Multilevel-cell (MLC) flash is commonly deployed in today’s high density NAND memories, but low latency and high reliability requirements make it barely used in automotive embedded flash applications. This paper presents a time domain voltage sensing scheme that applies a dynamic voltage ramp at the cells’ control gate (CG) in order to achieve fast and reliable sensing suitable for automotive applications.
| Author of HS Reutlingen | Wicht, Bernhard |
|---|---|
| URN: | urn:nbn:de:bsz:rt2-opus4-17191 |
| URL: | http://www.msc.tu-berlin.de/analog_workshop_2017/home/ |
| Erschienen in: | Analog Workshop 2017 : March 2-3, 2017, Technische Universität Berlin |
| Publisher: | Technische Universität Berlin |
| Place of publication: | Berlin |
| Editor: | Friedel Gerfers |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2017 |
| Page Number: | 1 |
| First Page: | 11 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Ja |
| Licence (German): |  Open Access |
