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Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress

  • LDMOS transistors in integrated power technologies are often subject to thermo-mechanical stress, which degrades the on-chip metallization and eventually leads to a short. This paper investigates small sense lines embedded in the LDMOS metallization. It will be shown that their resistance depends strongly on the stress cycle number. Thus, they can be used as aging sensors and predict impending failures. Different test structures have been investigated to identify promising layout configurations. Such sensors are key components for resilient systems that adaptively reduce stress to allow aggressive LDMOS scaling without increasing the risk of failure.

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Author of HS ReutlingenRitter, Matthias; Pfost, Martin
Erschienen in:Microelectronics reliability
Place of publication:Amsterdam
Document Type:Journal article
Publication year:2017
Tag:LDMOS; aging sensor; metallization failure; on-chip metallization; resistance change; resistance peak; sense line; thermomechanical stress
Page Number:5
First Page:512
Last Page:516
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt