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A gate driver IC based on high-voltage energy storing for GaN transistors

  • This work presents a fully integrated GaN gate driver in a 180nm HV BCD technology that utilizes high-voltage energy storing (HVES) in an on-chip resonant LC tank, without the need of any external capacitor. It delivers up to 11nC gate charge at a 5V GaN gate, which exceeds prior art by a factor of 45-83, supporting a broad range of GaN transistor types. The stacked LC tank covers an area of only 1.44mm², which corresponds to a superior value of 7.6nC/mm².

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Author of HS ReutlingenSeidel, Achim; Wicht, Bernhard
Erschienen in:Analog Workshop 2017 : March 2-3, 2017, Technische Universität Berlin
Publisher:Technische Universität Berlin
Place of publication:Berlin
Editor: Gerfers, Friedel
Document Type:Conference proceeding
Publication year:2017
Page Number:1
First Page:28
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Ja
Licence (German):License Logo  Open Access