A gate driver IC based on high-voltage energy storing for GaN transistors
- This work presents a fully integrated GaN gate driver in a 180nm HV BCD technology that utilizes high-voltage energy storing (HVES) in an on-chip resonant LC tank, without the need of any external capacitor. It delivers up to 11nC gate charge at a 5V GaN gate, which exceeds prior art by a factor of 45-83, supporting a broad range of GaN transistor types. The stacked LC tank covers an area of only 1.44mm², which corresponds to a superior value of 7.6nC/mm².
| Author of HS Reutlingen | Seidel, Achim; Wicht, Bernhard |
|---|---|
| URN: | urn:nbn:de:bsz:rt2-opus4-17260 |
| URL: | http://www.msc.tu-berlin.de/analog_workshop_2017/home/ |
| Erschienen in: | Analog Workshop 2017 : March 2-3, 2017, Technische Universität Berlin |
| Publisher: | Technische Universität Berlin |
| Place of publication: | Berlin |
| Editor: | Gerfers, Friedel |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2017 |
| Page Number: | 1 |
| First Page: | 28 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Ja |
| Licence (German): |  Open Access |
