Volltext-Downloads (blau) und Frontdoor-Views (grau)

A novel gate driver approach using an inductive feed forward for a robust turn-on of GaN power transistors with gate injection

  • Many GaN power transistors contain a PN junction between gate and the channel region close to the source. In order to maintain the on-state, current must continuously be supplied to the junction. Therefore, the commonly recommended approach uses a gate bias voltage of 12V to compensate the Miller current through a boost circuit. For the same purpose, a novel gate driving method based on an inductive feed forward has been presented. With this, stable turn-on can be achieved even for a bias voltage of only 5V. The effectiveness of this concept is demonstrated by double pulse measurements, switching currents up to 27A and a voltage of 400V. For both approaches a compact design with low source inductance is characterized. In addition to the significant reduction of the gate bias voltage and peak gate current, the new approach reduces the switching losses for load currents >23 A.

Download full text files

  • 2006.pdf

Export metadata

Additional Services

Share in Twitter Search Google Scholar


Author of HS ReutlingenHackel, Jonathan; Pfost, Martin
Erschienen in:2018 20th European Conference on Power Electronics and Applications (EPE '18 ECCE Europe) : 17-21 Sept. 2018
Place of publication:Piscataway, NJ
Document Type:Conference Proceeding
Year of Publication:2018
Tag:Gallium Nitride; discrete power device; efficiency; high frequency power converter
Page Number:6
First Page:1
Last Page:6
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open Access?:Nein
Licence (German):License Logo  Lizenzbedingungen IEEE