Integrated gate drivers based on high-voltage energy storing for GaN transistors
- This paper presents a fully integrated gate driver in a 180-nm bipolar CMOS DMOS (BCD) technology with 1.5-A max. gate current, suitable for normally OFF gallium nitride (GaN) power switches, including gate-injection transistors (GIT). Full-bridge driver architecture provides a bipolar and three-level gate drive voltage for a robust and efficient GaN switching. The concept of high voltage energy storing (HVES), which comprises an on-chip resonant LC tank, enables a very area-efficient buffer capacitor integration and superior gatedriving speed. It reduces the component count and the influence of parasitic gate-loop inductance. Theory and calculations confirm the benefits of HVES compared to other capacitor implementation methods. The proposed gate driver delivers a gate charge of up to 11.6 nC, sufficient to drive most types of currently available GaN power transistors. Consequently, HVES enables to utilize the fast switching capabilities of GaN for advanced and compact power electronics.
| Author of HS Reutlingen | Seidel, Achim; Wicht, Bernhard |
|---|---|
| DOI: | https://doi.org/10.1109/JSSC.2018.2866948 |
| ISSN: | 0018-9200 |
| Erschienen in: | IEEE journal of solid state circuits |
| Publisher: | IEEE |
| Place of publication: | New York, NY |
| Document Type: | Article |
| Language: | English |
| Year of Publication: | 2018 |
| Tag: | bootstrap circuit; capacitor integration; charge pump (CP); gallium nitride (GaN) transistor; gate drive speed; gate driver; gate driver supply; gate-injection transistor (GIT); resonant gate driver |
| Volume: | 53 |
| Issue: | 12 |
| Page Number: | 9 |
| First Page: | 3446 |
| Last Page: | 3454 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open Access?: | Nein |
| Licence (German): |  Lizenzbedingungen IEEE |
