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Integrated gate drivers based on high-voltage energy storing for GaN transistors

  • This paper presents a fully integrated gate driver in a 180-nm bipolar CMOS DMOS (BCD) technology with 1.5-A max. gate current, suitable for normally OFF gallium nitride (GaN) power switches, including gate-injection transistors (GIT). Full-bridge driver architecture provides a bipolar and three-level gate drive voltage for a robust and efficient GaN switching. The concept of high voltage energy storing (HVES), which comprises an on-chip resonant LC tank, enables a very area-efficient buffer capacitor integration and superior gatedriving speed. It reduces the component count and the influence of parasitic gate-loop inductance. Theory and calculations confirm the benefits of HVES compared to other capacitor implementation methods. The proposed gate driver delivers a gate charge of up to 11.6 nC, sufficient to drive most types of currently available GaN power transistors. Consequently, HVES enables to utilize the fast switching capabilities of GaN for advanced and compact power electronics.

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Metadaten
Author of HS ReutlingenSeidel, Achim; Wicht, Bernhard
DOI:https://doi.org/10.1109/JSSC.2018.2866948
ISSN:0018-9200
Erschienen in:IEEE journal of solid state circuits
Publisher:IEEE
Place of publication:New York, NY
Document Type:Journal article
Language:English
Publication year:2018
Tag:bootstrap circuit; capacitor integration; charge pump (CP); gallium nitride (GaN) transistor; gate drive speed; gate driver; gate driver supply; gate-injection transistor (GIT); resonant gate driver
Volume:53
Issue:12
Page Number:9
First Page:3446
Last Page:3454
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt