Improved inductive feed-forward for fast turn-on of power semiconductors during hard switching
- A transformer is used to increase the gate voltage during turn-on, thus reducing the necessary bias voltage of the gate driver. Counteracting the voltage dependency of the gate capacitance of high-voltage power devices, faster transitions are possible. The additional transformer only slighly increases the over-voltage during turn-off.
| Author of HS Reutlingen | Hackel, Jonathan |
|---|---|
| DOI: | https://doi.org/10.23919/EPE.2019.8914861 |
| ISBN: | 978-90-75815-31-3 |
| Erschienen in: | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2019 |
| Tag: | discrete power device; efficiency; high frequency power converter; switching losses |
| Page Number: | 8 |
| First Page: | 1 |
| Last Page: | 8 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
