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Integrated power semiconductors are often used for applications with cyclic on-chip power dissipation. This leads to repetitive self-heating and thermo-mechanical stress, causing fatigue on the on-chip metallization and possibly destruction by short circuits. Because of this, an accurate simulation of the thermo-mechanical stress is needed already during the design phase to ensure that lifetime requirements are met. However, a detailed thermo mechanical simulation of the device, including the on-chip metallization is prohibitively time-consuming due to its complex structure, typically consisting of many thin metal lines with thousands of vias. This paper introduces a two-step approach as a solution for this problem. First, a simplified but fast simulation is performed to identify the device parts with the highest stress. After, precise simulations are carried out only for them. The applicability of this method is verified experimentally for LDMOS transistors with different metal configurations. The measured lifetimes and failure locations correlate well with the simulations. Moreover, a strong influence of the layout of the on-chip metallization lifetime was observed. This could also be explained with the simulation
method.
The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event. However, this implies that the power distribution is homogeneous and that no current filamentation has to be considered. Therefore, this work investigates this assumption by evaluating the stability of a SiC-MOSFET over a wide range of operation conditions by measurements up to destruction, thermal simulations, and high-temperature characterization.
This paper investigates the electrothermal stability and the predominant defect mechanism of a Schottky gate AlGaN/GaN HEMT. Calibrated 3-D electrothermal simulations are performed using a simple semiempirical dc model, which is verified against high-temperature measurements up to 440°C. To determine the thermal limits of the safe operating area, measurements up to destruction are conducted at different operating points. The predominant failure mechanism is identified to be hot-spot formation and subsequent thermal runaway, induced by large drain–gate leakage currents that occur at high temperatures. The simulation results and the high temperature measurements confirm the observed failure patterns.
An integrated synchronous buck converter with a high resolution dead time control for input voltages up to 48V and 10MHz switching frequency is presented. The benefit of an enhanced dead time control at light loads to enable zero voltage switching at both the high-side and low-side switch at low output load is studied. This way, compact multi-MHz DCDC converters can be implemented at high efficiency over a wide load current range. The concept also eliminates body diode forward conduction losses and minimizes reverse recovery losses. A dead time resolution of 125 ps is realized by an 8-bit differential delay chain. A further efficiency enhancement by soft switching at the high-side switch at light load is achieved with a voltage boost of the switching node by dead time control in forced continuous conduction mode. The monolithic converter is implemented in an 180nm high-voltage BiCMOS technology. At V IN = 48V, V OUT = 5V, 50mA load, 10MHz switching frequency and 500 nH output inductance, the efficiency is measured to be increased by 14.4% compared to a conventional predictive dead time control. A peak efficiency of 80.9% is achieved at 12V input.
In recent years, significant progress has been made on switched-capacitor DC-DC converters as they enable fully integrated on-chip power management. New converter topologies overcame the fixed input-to-output voltage limitation and achieved high efficiency at high power densities. SC converters are attractive to not only mobile handheld devices with small input and output voltages, but also for power conversion in IoE, industrial and automotive applications, etc. Such applications need to be capable of handling widely varying input voltages of more than 10V, which requires a large amount of conversion ratios. The goal is to achieve a fine granularity with the least number of flying capacitors. In [1] an SC converter was introduced that achieves these goals at low input voltage VIN ≤ 2.5V. [2] shows good efficiency up to VIN = 8V while its conversion ratio is restricted to ≤1/2 with a limited, non-equidistant number of conversion steps. A particular challenge arises with increasing input voltage as several loss mechanisms like parasitic bottom-plate losses and gate-charge losses of high-voltage transistors become of significant influence. High input voltages require supporting circuits like level shifters, auxiliary supply rails etc., which allocate additional area and add losses [2-5]. The combination of both increasing voltage and conversion ratios (VCR) lowers the efficiency and the achievable output power of SC converters. [3] and [5] use external capacitors to enable higher output power, especially for higher VIN. However, this is contradictory to the goal of a fully integrated power supply.
A highly integrated synchronous buck converter with a predictive dead time control for input voltages >18 V with 10 MHz switching frequency is presented. A high resolution dead time of ˜125 ps allows to reduce dead time dependent losses without requiring body diode conduction to evaluate the dead time. High resolution is achieved by frequency compensated sampling of the switching node and by an 8 bit differential delay chain. Dead time parameters are derived in a comprehensive study of dead time depended losses. This way, the efficiency of fast switching DC-DC converters can be optimized by eliminating the body diode forward conduction losses, minimizing reverse recovery losses and by achieving zero voltage switching. High-speed circuit blocks for fast switching operation are presented including level shifter, gate driver, PWM generator. The converter has been implemented in a 180 nm high-voltage BiCMOS technology.
The power supply is one of the major challenges for applications like internet of things IoTs and smart home. The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the integrated micro power supply presented in this paper. Connected to the 120/230 Vrms mains, which is one of the most reliable energy sources and anywhere indoor available, it provides a 3.3V DC output voltage. The micro power supply consists of a fully integrated ACDC and DCDC converter with one external low voltage SMD buffer capacitor. The micro power supply is fabricated in a low cost 0.35 μm 700 V CMOS technology and covers a die size of 7.7 mm². The use of only one external low voltage SMD capacitor, results in an extremely compact form factor. The ACDC is a direct coupled, full wave rectifier with a subsequent bipolar shunt regulator, which provides an output voltage around 17 V. The DCDC stage is a fully integrated 4:1 SC DCDC converter with an input voltage as high as 17 V and a peak efficiency of 45 %. The power supply achieves an overall output power of 3 mW, resulting in a power density of 390 μW/mm². This exceeds prior art by a factor of 11.
Nowadays there is a rich diversity of sleep monitoring systems available on the market. They promise to offer information about sleep quality of the user by recording a limited number of vital signals, mainly heart rate and body movement. Typically, fitness trackers, smart watches, smart shirts, smartphone applications or patches do not provide access to the raw sensor data. Moreover, the sleep classification algorithm and the agreement ratio with the gold standard, polysomnography (PSG) are not disclosed. Some commercial systems record and store the data on the wearable device, but the user needs to transfer and import it into specialised software applications or return it to the doctor, for clinical evaluation of the data set. Thus an immediate feedback mechanism or the possibility of remote control and supervision are lacking. Furthermore, many such systems only distinguish between sleep and wake states, or between wake, light sleep and deep sleep. It is not always clear how these stages are mapped to the four known sleep stages: REM, NREM1, NREM2, NREM3-4. [1] The goal of this research is to find a reduced complexity method to process a minimum number of bio vital signals, while providing accurate sleep classification results. The model we propose offers remote control and real time supervision capabilities, by using Internet of Things (IoT) technology. This paper focuses on the data processing method and the sleep classification logic. The body sensor network representing our data acquisition system will be described in a separate publication. Our solution showed promising results and a good potential to overcome the limitations of existing products. Further improvements will be made and subjects with different age and health conditions will be tested.
We present a fully automatic approach to real-time 3D face reconstruction from monocular in-the-wild videos. With the use of a cascaded-regressor-based face tracking and a 3D morphable face model shape fitting, we obtain a semidense 3D face shape. We further use the texture information from multiple frames to build a holistic 3D face representation from the video footage. Our system is able to capture facial expressions and does not require any person specific training. We demonstrate the robustness of our approach on the challenging 300 Videos in the Wild (300- VW) dataset. Our real-time fitting framework is available as an open-source library at http://4dface.org.
A high-voltage replica based current sensor is presented, along with challenges and design techniques which are rarely discussed in literature so far. The performance is evaluated by detailed small signal and large signal analysis. By dedicated placing of high-voltage cascode devices, while keeping as many low-voltage devices as possible, a high gain-bandwidth product is achieved. A decoupling and biasing circuit is introduced which improves the response time of the current sensor at on/off transitions by a factor of five. The current sensor is implemented in a 180nm HV BiCMOS technology. The sensor achieves a DC loop gain of 83 dB and a gain-bandwidth product of 7 MHz. With the proposed techniques, the gain-bandwidth product is increased by a factor of six. The measurable current range is between 60mA and 1.5 A. The performance is demonstrated in a 500 kHz buck converter at an input voltage of 40V. The overall circuit concept is suitable for 100V and beyond, enabling high performance power management designs including switched mode power supplies and motor applications.