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To date, special interest has been paid to composite scaffolds based on polymers enriched with hydroxyapatite (HA). However, the role of HA containing different trace elements such as silicate in the structure of a polymer scaffold has not yet been fully explored. Here, we report the potential use of silicate-containing hydroxyapatite (SiHA) microparticles and microparticle aggregates in the predominant range from 2.23 to 12.40 μm in combination with polycaprolactone (PCL) as a hybrid scaffold with randomly oriented and well-aligned microfibers for regeneration of bone tissue. Chemical and mechanical properties of the developed 3D scaffolds were investigated with XRD, FTIR, EDX and tensile testing. Furthermore, the internal structure and surface morphology of the scaffolds were analyzed using synchrotron X-ray μCT and SEM. Upon culturing human mesenchymal stem cells (hMSC) on PCL-SiHA scaffolds, we found that both SiHA inclusion and microfiber orientation affected cell adhesion. The best hMSCs viability was revealed at 10 day for the PCL-SiHA scaffolds with well-aligned structure (~82%). It is expected that novel hybrid scaffolds of PCL will improve tissue ingrowth in vivo due to hydrophilic SiHA microparticles in combination with randomly oriented and well-aligned PCL microfibers, which mimic the structure of extracellular matrix of bone tissue.
Lehr- und Übungsbuch sowie Nachschlagewerk zur CAD-Software Creo Parametric und zu den Grundlagen der Produktdatenverwaltung mit Windchill. Vermittelt werden die Volumenmodellierung, die 3D Flächenmodellierung, die Blechmodellierung, die Baugruppen- und Zeichnungserstellung, das Erstellen von Animationen, die Definition und Anwendung kinematischer sowie dynamischer Analysen und die Definition von Baugruppen, die Konstruktionsvarianten "Top-Down" und "Bottom-Up" sowie die Organisation von Konstruktionsprojekten über Skelett Techniken.
Weiter werden die Grundlagen des Produktdatenmanagements im Konstruktionsbereich unter Windchill vermittelt. Alle Verfahren werden handlungsorientiert an einem weitgehend durchgehenden Modellierungsprojekt erarbeitet. Aufgrund des ausführlichen Inhalts- und Sachwortverzeichnisses sowie einer Vielzahl an Bildern ist das Buch als Grundlage für Vorlesungen, Schulungen oder Praktika und insbesondere auch zum Selbststudium sowie als Nachschlagewerk geeignet.
This paper presents a wide-Vin step-down parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300-nH resonant coil, placed in parallel to a conventional buck converter. Soft-switching resonant converters are beneficial for high-Vin multi-MHz converters to reduce dominant switching losses, enabling higher switching frequencies. The output filter inductor is optimized based on an empirical study of available inductors. The study shows that faster switching significantly reduces not only the inductor value but also volume, price, and even the inductor losses. In addition, unlike conventional resonant concepts, soft-switching control as part of the proposed PRC eliminates input voltage-dependent losses over a wide operating range, resulting in 76.3% peak efficiency. At Vin = 48 V, a loss reduction of 35% is achieved compared with the conventional buck converter. Adjusting an integrated capacitor array, and selecting the number of oscillation periods, keeps the switching frequency within a narrow range. This ensures high efficiency across a wide range of Vin = 12–48 V, 100–500-mA load, and 5-V output at up to 25-MHz switching frequency. Thanks to the low output current ripple, the output capacitor can be as small
as 50 nF.
The level shifter and the floating gate supply for high-side transistors are a major challenge in high-voltage DCDC converters. This paper presents a high speed and power-efficient level shifter for voltages of up to 50V, suitable for both PMOS and NMOS power FETs. A switching node falling edge detection allows both, a sensitive and safe signal detection. This enables a robust operation during steep dv / dt transitions and a power consumption as low as 4.1 pJ per switching cycle, which is a reduction of more than 40% compared to prior art. An active clamping circuit prevents common mode displacement currents into the high-side supply. The level shifter is implemented in a 180nm BiCMOS technology. Measurements confirm a 50V 120MHz high-speed operation of the level shifter with a rising / falling propagation delay of 1.45 ns / 1.3 ns, respectively. The dv / dt robustness has been confirmed by measurements for transitions up to 6V/ ns.
This paper presents a digitally controlled boost converter IC for high output voltage and fast transient applications. Thus, it is well applicable in automotive and industrial environments. The 3V-to-6V input voltage, 6.3V output voltage, 1A boost converter IC is fabricated in a 180nm BCD technology. Digital control enables cost savings, advanced control concepts, and it is less parameter sensitive compared to common analog control. A 90 ns latency, 6-bit delay line ADC operates with a window concept, meeting high resolution requirements, e.g. in car battery applications. An output voltage live tracking is included for extending the ADC conversion window. A charge pump DAC provides high resolution, monotonicity, and short 128 ns conversion time. Further, a standard digital PI controller is enhanced by a simple but effective ΔV/Δt-intervention control. It results in 2.8x reduced output voltage deviations in case of load steps, scaling down the output capacitor value by the same factor.
The increasing share of renewable energy with volatile production results in higher variability of prices for electrical energy. Optimized operating schedules, e.g., for industrial units, can yield a considerable reduction of energy costs by shifting processes with high power consumption to times with low energy prices. We present a distributed control architecture for virtual power plants (VPPs) where VPP participants benefit from flexible adaptation of schedules to price forecasts while maintaining control of their operating schedule. An aggregator trades at the energy market on behalf of the participants and benefits from more detailed and reliable load profiles within the VPP.
We present a dual active bridge topology suitable for wide voltage range applications covering all combinations of 200V to 600V on the input and 20V to 60V on the output with constant power of 1kW.We employ a stepped inductance scheme to adjust the effective inductance of the converter, thus extending the efficient operation range. Using a variable switching frequency between 35 kHz and 150 kHz with operation-point-dependent limits further increases the performance of the converter. A prototype was built and the proposed changes have been compared to a fixed frequency, fixed inductance implementation. Measurements show a maximum loss reduction of 40 %, leading to a peak efficiency of 97% while maintaining constant output power over the entire working area.
A wide-bandwidth galvanically isolated current sensing circuit with an integrated Rogowski coil in 180nm CMOS is presented. Exploiting the high-frequency properties of an optimized on-chip Rogowski coil, currents can be measured up to a bandwidth of 75 MHz. The analog sensor front-end comprises a two-stage integrator, which allows a chopper frequency below signal bandwidth, resulting in 2.2 mVrms output noise. An additional integrated Hall sensor extends the measurement range towards DC.
Due to their superior fast-switching performance, GaN transistors show enormous potential to enable compact power electronics in applications like renewable energy, electrical cars and home appliances by shrinking down the size of passives. However, fast switching poses challenges for the gate driver. Since GaN transistors have a low threshold voltage Vt of ~1V, an unintended driver turn-on can occur in case of a unipolar gate control as shown for a typical half-bridge in Fig. 24.2.1 (top left). This is due to coupling via the gate-drain capacitance (Miller coupling), when the low-side driver turns on, causing a peak current into the gate. This is usually tackled by applying a negative gate voltage to enhance the safety margin towards Vt, resulting in a bipolar gate-driving scheme. In many power-electronics applications GaN transistors operate in reverse conduction, carrying the inductor current during the dead time t, when the high-side and low-side switch are off (as illustrated at a high-side switch in Fig. 24.2.1, bottom left). As there is no real body diode as in silicon devices, the GaN transistor turns on in reverse operation with a voltage drop VF across the drain-source terminals (quasi-body diode behavior). As a negative gate voltage adds to VF, 63% higher reverse-conduction losses were measured for a typical GaN switch in bipolar gate-drive operation. This drawback is addressed by a three-level gate voltage (positive, 0V, negative), which at the same time provides robustness against unintended turn-on similar to the bipolar gate driver, proven in [1] for a discrete driver.
A fully passive RFID temperature sensor SoC with an accuracy of ±0.4°C (3σ) from 0°C to 125°C
(2018)
This paper presents a fully passive 13.56 MHz RFID temperature sensor system-on-chip. Its power management unit (PMU) operates over a large temperature range using a zero temperature coefficient (TC) bias source. On-chip temperature sensing is accomplished with low voltage, low power CMOS circuitry and time-domain signal processing. Two operating modes have been defined to study supply noise sensitivity: command mode and listening mode, which represent sensor operation during RFID command transfer and listening, respectively. Besides a standard readout command, a customized serial readout command is utilized to distinguish the data from both modes. In command mode, the sensor suffers from interference from the RFID command packet and outputs interference as well, while the sensor outputs no interference in listening mode. Measurements show that sensor resolution in listening mode is improved by a factor of approximately 16 compared to command mode. The chip was fabricated in a standard 0.35 µm CMOS technology and chip-on-board mounted to a tuned RFID transponder coil on an aluminium core FRA4 PCB substrate. Real-time wireless temperature sensing has been demonstrated with a commercial HF RFID reader. With a two-point calibration, the SoC achiesves a 3σ sensing accuracy of ±0.4°C from 0° C to 125° C.