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The possibility to bring the interference source, close to the potential target is characterized by the property of the source as stationary, portable, mobile, very mobile and highly mobile [3]. Starting from the existing and well-known IEME interference or IEMI (Intentional Electromagnetic Interference) and the already existing classifications an analysis of methods based on a comparative study of the methods used to classify the intentional EM environment is carried out, which takes into account the frequency, the cost, the amplitude of the noise signal, the radiated power and the energy of a pulse of radiation.
In diesem Beitrag wurde gezeigt, wie mit Hilfe von Verfahren zur Analyse von Petri–Netzen ein in der Programmiersprache Kontaktplan erstelltes SPS–Programm analysiert werden kann. Das Ziel des Verfahrens ist dabei nicht eine Verifikation im eigentlichen Sinne sondern das Aufdecken von verbotenen oder unerwünschten Zuständen. Im Beitrag wurden Regeln zur Transformation des im Kontaktplan erstellten Ablaufs in ein Petri–Netz angegeben und anhand der Analyse eines fehlerhaft implementierten Ablaufs die Leistungsfähigkeit des Ansatzes vorgestellt. Das Beispiel zeigt, dass Programmfehler bereits vor einem Test an der realen Anlage erkannt werden können. Bei der weiteren Entwicklung des Verfahrens liegt ein Schwerpunkt auf der Verallgemeinerung auf im Kontaktplan entwickelte Programmorganisationseinheiten, die nicht nur reine
Abläufe implementieren. Ein weiterer wichtiger Entwicklungsschritt ist die graphische Unterstützung der Fehlersuche im Erreichbarkeitsgraphen, so dass insgesamt ein leistungsfähiges Werkzeug zur Unterstützung der Implementierung von Ablaufsteuerungen im Kontaktplan zur Verfügung steht.
This paper enhances SWARM, a novel deterministic analog layout automation approach based on the idea of cellular automata. SWARM implements a decentralized interaction model in which responsive layout modules, covering basic circuit types, autonomously move, rotate and deform themselves to let constraint-compliant, compact layout solutions emerge from a synergetic flow of self-organization. With the ability to consider design constraints both implicitly and explicitly, SWARM joins the layout quality of procedural generators with the flexibility of optimization algorithms, combining these two kinds of automation into a “bottom-up meets top-down” flow. The new enhancements are demonstrated in an OTA example, depicting the power of SWARM and its enormous potential for future developments.
An ultra-low power capacitance extrema and ratio detector for electrostatic energy harvesters
(2015)
The power supply is one of the major challenges for applications like internet of things IoTs and smart home. The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the integrated micro power supply presented in this paper. Connected to the 120/230 Vrms mains, which is one of the most reliable energy sources and anywhere indoor available, it provides a 3.3V DC output voltage. The micro power supply consists of a fully integrated ACDC and DCDC converter with one external low voltage SMD buffer capacitor. The micro power supply is fabricated in a low cost 0.35 μm 700 V CMOS technology and covers a die size of 7.7 mm2. The use of only one external low voltage SMD capacitor, results in an extremely compact form factor. The ACDC is a direct coupled, full wave rectifier with a subsequent bipolar shunt regulator, which provides an output voltage around 17 V. The DCDC stage is a fully integrated 4:1 SC DCDC converter with an input voltage as high as 17 V and a peak efficiency of 45 %. The power supply achieves an overall output power of 3 mW, resulting in a power density of 390 μW/mm2. This exceeds prior art by a factor of 11.
This paper presents a compact four-arm spiral antenna, which may be used in direction-finding applications but also mobile communication systems. The antenna is fed sequentially at its outside-ends using a sequential phase network embedded in grounded multilayer dielectric media. Sequential rotation is applied to generate the axial mode M1 but also the conical mode M2 in the same frequency band. The antenna exhibits good radiation characteristics in the frequency band of interest.
This paper presents a laboratory experiment integrating the fields of electronics design, power electronics and drive control. The aim of this experiment is first to illustrate the need for a deep knowledge and the challenges in power electronics and its applications, in this particular case for drive control. The different tasks in this experiment are executed on a complete setup for a brushless dc motor test bench. The tasks assigned to the students are designed such that, in some tasks the knowledge from a particular field, power electronics, electronic design or drive control is deepened, whereas in other tasks the knowledge from more than one of these fields is needed to solve the given problem. Thus, the experiment trains students in the particular domains but illustrates as well the links between power electronics, electronic design and drive control.
IGBT modules with anti-parallel FWDs are widely used in inductive load switching power applications, such as motor drive applications. Nowadays there is a continuous effort to increase the efficiency of such systems by decreasing their switching losses. This paper addresses the problems arising in the turn-on process of an IGBT working in hard-switching conditions. A method is proposed which achieves – contrary to most other approaches – a high switching speed and, at the same time, a low peak reverse-recovery current. This is done by applying an improved gate current waveform that is briefly lowered during the turn-on process. The proposed method achieves low switching losses. Its effectiveness is demonstrated by experimental results with IGBT modules for 600V and 1200V.
An experimental study of a zero voltage switching SiC boost converter with an active snubber network
(2015)
This paper presents a quasi-resonant, zero voltage switching (ZVS) SiC boost converter for an output power of up to 10 kW. The converter is realized with an easily controllable active snubber network that allows a reduction of switching losses by minimizing the voltage stress applied to the active switch. With this approach, an increase of the switching frequency is possible, allowing a reduction of the system size. Experiments show a maximum converter efficiency up to 99.2% for a switching frequency of 100 kHz. A second version of the converter enables a further size reduction by increasing the switching frequency to 300 kHz while still reaching a high efficiency up to 98.4 %.
This paper presents an efficient implementation of a reconfigurable battery stack which allows full exploitation of the capacity of every single cell. Contrary to most other approaches, it is possible to electrically remove one or more cells from the battery stack. Therefore, the overall capacity of the system is not restricted by the weaker cells, and cells with very different states of health can be used, making the system very attractive for refurbished batteries. For the required switches, low-voltage high-current MOSFETs are used. A demonstrator has been built with a total capacity of up to 3.5 kWh, a nominal voltage of 35 V, and currents up 200 A.
Gallium nitride high electron mobility transistors (GaN-HEMTs) have low capacitances and can achieve low switching losses in applications where hard turn-on is required. Low switching losses imply a fast switching; consequently, fast voltage and current transients occur. However, these transients can be limited by package and layout parasitics even for highly optimized systems. Furthermore, a fast switching requires a fast charging of the input capacitance, hence a high gate current.
In this paper, the switching speed limitations of GaN-HEMTs due to the common source inductance and the gate driver supply voltage are discussed. The turn-on behavior of a GaN-HEMT is simulated and the impact of the parasitics and the gate driver supply voltage on the switching losses is described in detail. Furthermore, measurements are performed with an optimized layout for a drain-source voltage of 500 V and a drain-source current up to 60 A.
We propose a novel technique to compensate the effects of R-C / gm-C time-constant (TC) errors due to process variation in continuous-time delta-sigma modulators. Local TC error compensation factors are shifted around in the modulator loop to positions where they can be implemented efficiently with tunable circuit structures, such as current-steering digital-to-analog converters (DAC). This approach constitutes an alternative or supplement to existing compensation techniques, including capacitor or gm tuning. We apply the proposed technique to a third-order, single-bit, low-pass continuous-time delta-sigma modulator in cascaded integrator feedback structure. A feedback path tuning scheme is derived analytically and confirmed numerically using behavioral simulations. The modulator circuit was implemented in a 0.35-μm CMOS process using an active feedback coefficient tuning structure based on current-steering DACs. Post-layout simulations show that with this tuning structure, constant performance and stable operation can be obtained over a wide range of TC variation.
Nowadays the software development plays an important role in the entire value chain in production machine and plant engineering. An important component for rapid development of high quality software is the virtual commissioning. The real machine is described on the basis of simulation models. Therefore, the control software can be verified at an early stage using the simulation models. Since production machines are produced highly individual or in very small series, the challenge of virtual commissioning is to reduce the effort to the development of simulation models. Therefore, a systematic reuse of the simulation models and the control software for different variants of a machine is essential for an economic use. This necessarily requires a consideration of the variability which may occur between the production machines. This paper analyzes the question of how to systematically deal with the software-related variability in the context of virtual commissioning. For this purpose, first the characteristics of the virtual commissioning and variability handling are considered. Subsequently, the requirements to a so-called variant infrastructure for virtual commissioning are analyzed and possible solutions are discussed.
Advancing mental health diagnostics: AI-based method for depression detection in patient interviews
(2023)
In this paper, we present a novel artificial intelligence (AI) application for depression detection, using advanced transformer networks to analyse clinical interviews. By incorporating simulated data to enhance traditional datasets, we overcome limitations in data protection and privacy, consequently improving the model’s performance. Our methodology employs BERT-based models, GPT-3.5, and ChatGPT-4, demonstrating state-of-the-art results in detecting depression from linguistic patterns and contextual information that significantly outperform previous approaches. Utilising the DAIC-WOZ and Extended-DAIC datasets, our study showcases the potential of the proposed application in revolutionising mental health care through early depression detection and intervention. Empirical results from various experiments highlight the efficacy of our approach and its suitability for real-world implementation. Furthermore, we acknowledge the ethical, legal, and social implications of AI in mental health diagnostics. Ultimately, our study underscores the transformative potential of AI in mental health diagnostics, paving the way for innovative solutions that can facilitate early intervention and improve patient outcomes.
This paper addresses the turn-on switching process of insulated-gate bipolar transistor (IGBT) modules with anti-parallel free-wheeling diodes (FWD) used in inductive load switching power applications. An increase in efficiency, i.e. decrease in switching losses, calls for a fast switching process of the IGBT, but this commonly implies high values of the reverse-recovery current overshoot. To overcome this undesired behaviour, a solution was proposed which achieves an independent control of the collector current slope and peak reverse recovery current by applying a gate current that is briefly turned negative during the turn-on process. The feasibility of this approach has already been shown, however, a sophisticated control method is required for applying it in applications with varying currents, temperature and device parameters. In this paper a solution based on an adaptive, iterative closed-loop ontrol is proposed. Its effectiveness is demonstrated by experimental results from a 1200 V/200A IGBT power module for different load currents and reverse-recovery current overshoots.
This contribution presents a three-phase power stage for motor control with continuous output voltages using wide bandgap semiconductors and an asynchronous delta-sigma based switching signal generation. The focus of the paper is on an active damping approach for the LC output filter based on inductor current feedback.
This paper illustrates the implementation of series connected hardware modules as part of a scalable and modular power electronics device, which is ideally suited in the field of electric vehicles using wide bandgap semiconductor devices. The main benefit of the modular concept is that different current or voltage requirements can be satisfied based on the appropriate series or parallel connection of single modules. The particular design is based on the fact that the single modules generate a continuous and specified output voltage from a given dc voltage. The current work focuses on a brief classification of this work in different series connected concepts of power converters and in particular on an active damping approach for the series connected LC output filters based on inductor current feedback.
The demonstration project Virtual Power Plant Neckar-Alb is constructing a Virtual Power Plant (VPP) demonstration site at the Reutlingen University campus. The VPP demonstrator integrates a heterogeneous set of distributed energy resources (DERs) which are connected to control the infrastructure and an energy management system. This paper describes the components and the architecture of the demonstrator and presents strategies for demonstration of multiple optimization and control systems with different control paradigms.
A simple determination of the error voltage compensation map for motor parameter identification
(2018)
This paper proposes a new method for determining the error voltage compensation map in a parameter identification procedure of three-phase induction motors with an inverter. The compensation curve depending on the motor current is determined using a simple procedure based on given reference voltage steps and the corresponding steady state values of the stator current of the induction motor.
This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500°C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
In analog layout design, chip floorplans are usually still handcrafted by human experts. Particularly, the nondiscrete variability of block dimensions must be exploited thereby, which is a serious challenge for optimization-based algorithmic floorplanners. This paper presents a fundamentally new automation approach based on self-organization, in which floorplan blocks can autonomously move, rotate and deform themselves to jointly let compact results emerge from a synergistic flow of interaction. Our approach is able to minimize area and wirelength, supports nonslicing floorplan structures, can consider fully variable block dimensions, accounts for a fixed rectilinear boundary, and works absolutely deterministic. The approach is innovatively different from conventional, top-down oriented floorplanning algorithms.
Multilevel-cell (MLC) flash is commonly deployed in today’s high density NAND memories, but low latency and high reliability requirements make it barely used in automotive embedded flash applications. This paper presents a time domain voltage sensing scheme that applies a dynamic voltage ramp at the cells’ control gate (CG) in order to achieve fast and reliable sensing suitable for automotive applications.
DMOS transistors in integrated smart power technologies are often subject to cyclic power dissipation with substantial selfheating. This leads to repetitive thermo mechanical stress, causing fatigue of the on-chip metallization and limiting the lifetime. Hence, most designs use large devices for lower peak temperatures and thus reduced stress to avoid premature failures.
However, significantly smaller DMOS transistors are acceptable if the system reverts to a safer operating condition with lower stress when a failure is expected to occur in the near future. Hence, suitable early-warning sensors are required. This paper proposes a floating metal meander embedded between DMOS source and drain to detect an impending metallization failure. Measurement results of several variants will be presented and discussed, investigating their suitability as early warning indicators.
A procedural approach to automate the manual design process in analog integrated circuit design
(2018)
This paper presents a novel approach to automating the design of analog integrated circuits: (1) the Expert Design Plan (EDP), a procedural generator, and (2) the EDP Language, a high-level description language for writing an EDP. An EDP is a parameterizable, executable script, which reproduces a designer’s course of action when designing a circuit. Thus, an EDP formalizes the design expert’s knowledge-based strategy and makes it reusable. Since it is essential that an EDP represents a circuit designers’ way of thinking and working as close as possible, the designers themselves should be enabled to create the EDP. Therefore, our approach provides a input method through a domain-specific language called EDP Language (EDPL). Using this language is intuitive and requires no special training. In an exemplary implementation of our approach, a common-source amplifier is automatically sized using a set of only 10 instructions. Even in the first usage our EDP approach has appeared to be more efficient than the manual sizing process.
This work presents a spiral antenna array, which can be used in the V- and W-Band. An array equipped with Dolph-Chebychev coefficients is investigated to address issues related to the low gain and side lobe level of the radiating structure. The challenges encountered in this achievement are to provide an antenna that is not only good matched but also presents an appreciable effective bandwidth at the frequency bands of interest. Its radiation properties including the effective bandwidth and the gain are analyzed for the W-Band.
A single-phase fixed-frequency operated power factor correction circuit with reduced switching losses is proposed. The circuit uses the combination of a boost converter with an added clamp-switch, a pulse wave shaping circuit, and a standard control IC to discharge the transistor's output capacitance prior to its turn-on. In this way, a very low-complexity control circuit implementation to reduce switching losses or even achieve complete zero-voltage switching without additional sensors is possible. Moreover, this operation method is achieved at a constant switching frequency, possibly simplifying the design of the EMI filter and the converter's inductor. Experimental test results for a 100 W prototype converter are presented to validate the feasibility of the proposed operating method and corresponding circuit structure.
In contrast to IC design, MEMS design still lacks sophisticated component libraries. Therefore, the physical design of MEMS sensors is mostly done by simply drawing polygons. Hence, the sensor structure is only given as plain graphic data which hinders the identification and investigation of topology elements such as spring, anchor, mass and electrodes. In order to solve this problem, we present a rule-based recognition algorithm which identifies the architecture and the topology elements of a MEMS sensor. In addition to graphic data, the algorithm makes use of only a few marking layers, as well as net and technology information. Our approach enables RC-extraction with commercial field solvers and a subsequent synthesis of the sensor circuit. The mapping of the extracted RC-values to the topology elements of the sensor enables a detailed analysis and optimization of actual MEMS sensors.
A novel gate driving approach to balance the transient current of parallel-connected GaN-HEMTs
(2018)
To enable higher current handling capability of GaN-based DC/DC converters, devices have to be used in parallel. However, their switching times differ, especially if their threshold voltages are not identical, which causes unbalanced device current. This paper focuses on the homogeneous distribution of turn-on switching losses of GaN-HEMTs connected in parallel. By applying a new gate driver concept, the transient current is distributed evenly. The effectiveness of this concept is demonstrated by double pulse measurements, for switching currents up to 45A and a voltage of 400V. A uniform current distribution is achieved, including a reduction of the turn-on losses by 50% compared to a conventional setup.
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switching transients under hard-switching conditions. However, these transients are often limited by parasitic elements, especially by the source inductance and the parasitic capacitances of the power semiconductor. These limitations cannot be compensated by conventional gate drivers. To overcome this, a novel gate driver approach for power semiconductors was developed. It uses a transformer which accelerates the switching by transferring energy from the source path to the gate path.
Experimental results of the novel gate driver approach show a turn-on energy reduction of 78% (from 80 μJ down to 17 μJ) with a drain-source voltage of 500V and a drain current of 60 A. Furthermore, the efficiency improvement is demonstrated for a hard-switching boost converter. For a switching frequency of 750 kHz with an input voltage of 230V and an output voltage of 400V, it was possible to extend the output power range by 35%(from 2.3kW to 3.1 kW), due to the reduction of the turn-on losses, therefore lowering the junction temperature of the GaN-HEMT.
Many GaN power transistors contain a PN junction between gate and the channel region close to the source. In order to maintain the on-state, current must continuously be supplied to the junction. Therefore, the commonly recommended approach uses a gate bias voltage of 12V to compensate the Miller current through a boost circuit. For the same purpose, a novel gate driving method based on an inductive feed forward has been presented. With this, stable turn-on can be achieved even for a bias voltage of only 5V. The effectiveness of this concept is demonstrated by double pulse measurements, switching currents up to 27A and a voltage of 400V. For both approaches a compact design with low source inductance is characterized. In addition to the significant reduction of the gate bias voltage and peak gate current, the new approach reduces the switching losses for load currents >23 A.
This paper presents a novel emulation concept for the test of smart contracts and Distributed Ledger Technologies (DLT) in distribute control or energy economy tasks and use cases. The concept uses state of the art behavioral modeling tools such as Matlab Simulink but presents a possible way to solve the shortfall of Simulink in communicating to DLT-Nodes directly. This is solved through a middleware solution. After this, an example used in verifying the test bed is presented and the target demonstration object is described. Finally, the possible expansion of the system is discussed and presented.
A novel configuration of the dual active bridge (DAB) DC/DC converter is presented, enabling more efficient wide voltage range conversion at light loads. A third phase leg as well as a center tapped transformer are introduced to one side of the converter. This concept provides two different turn ratios, thus extending the zero voltage switching operation resulting in higher efficiency. A laboratory prototype was built converting an input voltage of 40V to an output voltage in the range of 350V to 650V. Measurements show a significant increase up to 20% in the efficiency for light-load operation.
A novel brushless excitation concept for synchronous machines with a rotating power converter is proposed in this paper. The concept does not need an auxiliary winding or any other modification to the machine structure apart from an inverter with a DC link capacitor and a controller on the rotor. The power required for the rotor excitation is provided by injecting harmonics into the stator winding. Thus, a voltage in the field coil is induced. The rotor inverter is controlled such that the alternating current charges the DC link capacitor. At the same time the inverter supplies the DC field current to the field coil. The excitation concept is first developed in theory, then presented using an analytical model and FEA, and lastly investigated with a prelimininary experimental setup.
This article presents a modified method of performing power flow calculations as an alternative to pure energy-based simulations of off-grid hybrid systems. The enhancement consists in transforming the scenario-based power flow method into a discrete time-dependent algorithm with the inclusion of bus and controller dynamics.
This paper introduces a novel placement methodology for a common-centroid (CC) pattern generator. It can be applied to various integrated circuit (IC) elements, such as transistors, capacitors, diodes, and resistors. The proposed method consists of a constructive algorithm which generates an initial, close to the optimum, solution, and an iterative algorithm which is used subsequently, if the output of constructive algorithm does not satisfy the desired criteria. The outcome of this work is an automatic CC placement algorithm for IC element arrays. Additionally, the paper presents a method for the CC arrangement evaluation. It allows for evaluating the quality of an array, and a comparison of different placement methods.
A new method for the analysis of movement dependent parasitics in full custom designed MEMS sensors
(2017)
Due to the lack of sophisticated microelectromechanical systems (MEMS) component libraries, highly optimized MEMS sensors are currently designed using a polygon driven design flow. The strength of this design flow is the accurate mechanical simulation of the polygons by finite element (FE) modal analysis. The result of the FE-modal analysis is included in the system model together with the data of the (mechanical) static electrostatic analysis. However, the system model lacks the dynamic parasitic electrostatic effects, arising from the electric coupling between the wiring and the moving structures. In order to include these effects in the system model, we present a method which enables the quasi dynamic parasitic extraction with respect to in-plane movements of the sensor structures. The method is embedded in the polygon driven MEMS design flow using standard EDA tools. In order to take the influences of the fabrication process into account, such as etching process variations, the method combines the FE-modal analysis and the fabrication process simulation data. This enables the analysis of dynamic changing electrostatic parasitic effects with respect to movements of the mechanical structures. Additionally, the result can be included into the system model allowing the simulation of positive feedback of the electrostatic parasitic effects to the mechanical structures.
This paper presents a new broadband antenna for satellite communications. It describes the procedure involved in the design of a microstrip antenna array and its multi-level passive feed network that together yield circular polarization and the necessary gain to be used in an earth-satellite link. The designed antenna is notable for its large bandwidth, circular polarization, high gain and small dimensions.
3D morphable face models are a powerful tool in computer vision. They consist of a PCA model of face shape and colour information and allow to reconstruct a 3D face from a single 2D image. 3D morphable face models are used for 3D head pose estimation, face analysis, face recognition, and, more recently, facial landmark detection and tracking. However, they are not as widely used as 2D methods - the process of building and using a 3D model is much more involved.
In this paper, we present the Surrey Face Model, a multi resolution 3D morphable model that we make available to the public for non-commercial purposes. The model contains different mesh resolution levels and landmark point annotations as well as metadata for texture remapping. Accompanying the model is a lightweight open-source C++ library designed with simplicity and ease of integration as its foremost goals. In addition to basic functionality, it contains pose estimation and face frontalisation algorithms. With the tools presented in this paper, we aim to close two gaps. First, by offering different model resolution levels and fast fitting functionality, we enable the use of a 3D Morphable Model in time-critical applications like tracking. Second, the software library makes it easy for the community to adopt the 3D morphable face model in their research, and it offers a public place for collaboration.
This paper presents an approach for the implementation of a modular and scalable power electronics device for controlling electric drives in the field of electric vehicles using wide bandgap semiconductor devices. The main idea is to achieve the required output currents or voltages by connecting adequately designed hardware modules in parallel or in series. This particular design is based on the fact that the single modules generate a continuous and specified output voltage from a given dc voltage, e.g. an intermediate circuit or battery voltage. The main benefit is, that different current or voltage requirements can be satisfied based on a single module thus decreasing development and production costs. The current paper focuses on the connection in parallel of such modules. A control architecture is illustrated and a first proof of concept is given.
A millimeter-wave power amplifier concept in an advanced silicon germanium (SiGe) BiCMOS technology is presented. The goal of the concept is to investigate the impact of physical limitations of the used heterojunction bipolar transistors (HBT) on the performance of a 77 GHz power amplifier. High current behavior, collectorbase breakdown and transistor saturation can be forced with the presented design. The power amplifier is manufactured in an advanced SiGe BiCMOS technology at Infineon Technologies AG with a maximum transit frequency fT of around 250 GHz for npn HBT’s [1]. The simulation results of the power amplifier show a saturated output power of 16 dBm at a power added efficiency of 13%. The test chip is designed for a supply voltage of 3.3 V and requires a chip size of 1.448 x 0.930 mm².
A TLP system with a very low characteristic impedance of 1.5 Ω and a selectable pulse length from 0.5 to 6 μs is presented. It covers the entire operation region of many power semiconductors up to 700 V and 400 A. Ist applicability is demonstrated by determining the Output characteristics for two Cool MOS devices up to destruction.
This paper presents a compact 3 kW bidirectional GaN-HEMT DC/DC converter for 360V to 400-500 V. A very high efficiency has been reached by applying a zero voltage turn-on in conjunction with a negative gate-source voltage, even though normally-off HEMTs are used. Further improvements were achieved by adapting the switching frequency to the load current and output voltage, as will be explained by means of the loss contribution of the specific elements for a constant and an adaptive switching frequency. Measurements have shown a high converter efficiency exceeding 99% over a wide output power range of up to 3 kW.
We present a new methodology for automatic selection and sizing of analog circuits demonstrated on the OTA circuit class. The methodology consists of two steps: a generic topology selection method supported by a “part-sizing” process and subsequent final sizing. The circuit topologies provided by a reuse library are classified in a topology tree. The appropriate topology is selected by traversing the topology tree starting at the root node. The decision at each node is gained from the result of the part-sizing, which is in fact a node-specific set of simulations. The final sizing is a simulation-based optimization. We significantly reduce the overall simulation effort compared to a classical simulation-based optimization by combining the topology selection with the part-sizing process in the selection loop. The result is an interactive user friendly system, which eases the analog designer’s work significantly when compared to typical industrial practice in analog circuit design. The topology selection method and sizing process are implemented as a tool into a typical analog design environment. The design productivity improvement achievable by our method is shown by a comparison to other design automation approaches.
A generic, knowledge-based method for automatic topology selection of analog circuits in a predefined analog reuse library is presented in this paper on the OTA (Operational Transconductance Amplifier) example. Analog circuits of a given circuit class are classified in a topology tree, where each node represents a specific topology. Child nodes evolve from their parent nodes by an enhancement of the parent node’s topological structure. Topology selection is performed by a depth first-search in the topology tree starting at the root node, thus checking topologies of increasing complexity. The decisions at each node are based on solving equations or – if this is not possible – on simulations. The search ends at the first (and thus the simplest) topology which can meet the specification after an adequate circuit sizing. The advantages of the generic, tree based topology selection method presented in this paper are shown in comparison to a pool selection method and to heuristic approaches. The selection is based on an accomplished chip investigation.
In this paper, we address the novel EDP (Expert Design Plan) principle for procedural design automation of analog integrated circuits, which captures the knowledge-based design strategy of human circuit designers in an executable script, making it reusable. We present the EDP Player, which enables the creation and execution of EDPs for arbitrary circuits in the Cadence® Virtuoso® Design Environment. The tool provides a generic version of an instruction set, called EDPL (EDPLanguage), enabling emulation of a typical manual analog sizing flow. To automate the design of a Miller Operational Amplifier and to create variants of a Smart Power IC, several EDPs were implemented using this tool. Employing these EDPs leads to a strong reduction of design time without compromising design quality or reliability.
This work presents a fully integrated GaN gate driver in a 180nm HV BCD technology that utilizes high-voltage energy storing (HVES) in an on-chip resonant LC tank, without the need of any external capacitor. It delivers up to 11nC gate charge at a 5V GaN gate, which exceeds prior art by a factor of 45-83, supporting a broad range of GaN transistor types. The stacked LC tank covers an area of only 1.44mm², which corresponds to a superior value of 7.6nC/mm².
A gate driver approach is presented for the reduction of turn-on losses in hard switching applications. A significant turn-on loss reduction of up to 55% has been observed for SiCMOSFETs. The gate driver approach uses a transformer which couples energy from the power path back into the gate path during switching events, providing increased gate driver current and thereby faster switching speed.
The gate driver approach was tested on a boost converter running at a switching frequency up to 300 kHz. With an input voltage of 300V and an output voltage of 600V, it was possible to reduce the converter losses by 8% at full load. Moreover, the output power range could be extended by 23% (from 2.75kW to 3.4 kW) due to the reduction of the turn-on losses.
A fully passive RFID temperature sensor SoC with an accuracy of ±0.4°C (3σ) from 0°C to 125°C
(2018)
This paper presents a fully passive 13.56 MHz RFID temperature sensor system-on-chip. Its power management unit (PMU) operates over a large temperature range using a zero temperature coefficient (TC) bias source. On-chip temperature sensing is accomplished with low voltage, low power CMOS circuitry and time-domain signal processing. Two operating modes have been defined to study supply noise sensitivity: command mode and listening mode, which represent sensor operation during RFID command transfer and listening, respectively. Besides a standard readout command, a customized serial readout command is utilized to distinguish the data from both modes. In command mode, the sensor suffers from interference from the RFID command packet and outputs interference as well, while the sensor outputs no interference in listening mode. Measurements show that sensor resolution in listening mode is improved by a factor of approximately 16 compared to command mode. The chip was fabricated in a standard 0.35 µm CMOS technology and chip-on-board mounted to a tuned RFID transponder coil on an aluminium core FRA4 PCB substrate. Real-time wireless temperature sensing has been demonstrated with a commercial HF RFID reader. With a two-point calibration, the SoC achiesves a 3σ sensing accuracy of ±0.4°C from 0° C to 125° C.
Due to their superior fast-switching performance, GaN transistors show enormous potential to enable compact power electronics in applications like renewable energy, electrical cars and home appliances by shrinking down the size of passives. However, fast switching poses challenges for the gate driver. Since GaN transistors have a low threshold voltage Vt of ~1V, an unintended driver turn-on can occur in case of a unipolar gate control as shown for a typical half-bridge in Fig. 24.2.1 (top left). This is due to coupling via the gate-drain capacitance (Miller coupling), when the low-side driver turns on, causing a peak current into the gate. This is usually tackled by applying a negative gate voltage to enhance the safety margin towards Vt, resulting in a bipolar gate-driving scheme. In many power-electronics applications GaN transistors operate in reverse conduction, carrying the inductor current during the dead time t, when the high-side and low-side switch are off (as illustrated at a high-side switch in Fig. 24.2.1, bottom left). As there is no real body diode as in silicon devices, the GaN transistor turns on in reverse operation with a voltage drop VF across the drain-source terminals (quasi-body diode behavior). As a negative gate voltage adds to VF, 63% higher reverse-conduction losses were measured for a typical GaN switch in bipolar gate-drive operation. This drawback is addressed by a three-level gate voltage (positive, 0V, negative), which at the same time provides robustness against unintended turn-on similar to the bipolar gate driver, proven in [1] for a discrete driver.
A wide-bandwidth galvanically isolated current sensing circuit with an integrated Rogowski coil in 180nm CMOS is presented. Exploiting the high-frequency properties of an optimized on-chip Rogowski coil, currents can be measured up to a bandwidth of 75 MHz. The analog sensor front-end comprises a two-stage integrator, which allows a chopper frequency below signal bandwidth, resulting in 2.2 mVrms output noise. An additional integrated Hall sensor extends the measurement range towards DC.