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This work presents a fully integrated GaN gate driver in a 180nm HV BCD technology that utilizes high-voltage energy storing (HVES) in an on-chip resonant LC tank, without the need of any external capacitor. It delivers up to 11nC gate charge at a 5V GaN gate, which exceeds prior art by a factor of 45-83, supporting a broad range of GaN transistor types. The stacked LC tank covers an area of only 1.44mm², which corresponds to a superior value of 7.6nC/mm².