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This paper introduces a novel placement methodology for a common-centroid (CC) pattern generator. It can be applied to various integrated circuit (IC) elements, such as transistors, capacitors, diodes, and resistors. The proposed method consists of a constructive algorithm which generates an initial, close to the optimum, solution, and an iterative algorithm which is used subsequently, if the output of constructive algorithm does not satisfy the desired criteria. The outcome of this work is an automatic CC placement algorithm for IC element arrays. Additionally, the paper presents a method for the CC arrangement evaluation. It allows for evaluating the quality of an array, and a comparison of different placement methods.
The diversity of energy prosumer types makes it difficult to create appropriate incentive mechanisms that satisfy both prosumers and energy system operators alike. Meanwhile, European energy suppliers buy guarantees of origin (GoO) which allow them to sell green energy at premium prices while in reality delivering grey energy to their customers. Blockchain technology has proven itself to be a robust paying system in which users transact money without the involvement of a third party. Blockchain tokens can be used to represent a unit of energy and, just as GoOs, be submitted to the market. This paper focuses on simulating marketplace using the ethereum blockchain and smart contracts, where prosumers can sell tokenized GoOs to consumers willing to subsidize renewable energy producers. Such markets bypass energy providers by allowing consumers to obtain tokenized GoOs directly from the producers, which in turn benefit directly from the earnings. Two market strategies where tokens are sold as GoOs have been simulated. In the Fix Price Strategy prosumers sell their tokens to the average GoO price of 2014. The Variable Price Strategy focuses on selling tokens at a price range defined by the difference between grey and green energy. The study finds that the ethereum blockchain is robust enough to functions as a platform for tokenized GoO trading. Simulation results have been compared and the results indicate that prosumers earn significantly more money by following the Variable Price
Strategy.
We present a topology of MIMO arrays of inductive antennas exhibiting inherent high crosstalk cancellation capabilities. A single layer PCB is etched into a 3-channels array of emitting/receiving antennas. Once coupled with another similar 3-channels emitter/receiver, we measured an Adjacent Channel Rejection Ratio (ACRR) as high as 70 dB from 150 Hz to 150 kHz. Another primitive device made out of copper wires wound around PVC tubes to form a 2-channels “non-contact slip-ring” exhibited 22 dB to 47 dB of ACRR up to 15MHz. In this paper we introduce the underlying theoretical model behind the crosstalk suppression capabilities of those so-called “Pie-Chart antennas”: an extension of the mutual inductance compensation method to higher number of channels using symmetries. We detail the simple iterative building process of those antennas, illustrate it with numerical analysis and evaluate there effectiveness via real experiments on the 3-channels PCB array and the 2-channels rotary array up to the limit of our test setup. The Pie Chart design is primarily intended as an alternative solution to costly electronic filters or cumbersome EM shields in wireless AND wired applications, but not exclusively.
Gallium nitride high electron mobility transistors (GaN-HEMTs) have low capacitances and can achieve low switching losses in applications where hard turn-on is required. Low switching losses imply a fast switching; consequently, fast voltage and current transients occur. However, these transients can be limited by package and layout parasitics even for highly optimized systems. Furthermore, a fast switching requires a fast charging of the input capacitance, hence a high gate current.
In this paper, the switching speed limitations of GaN-HEMTs due to the common source inductance and the gate driver supply voltage are discussed. The turn-on behavior of a GaN-HEMT is simulated and the impact of the parasitics and the gate driver supply voltage on the switching losses is described in detail. Furthermore, measurements are performed with an optimized layout for a drain-source voltage of 500 V and a drain-source current up to 60 A.
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switching transients under hard-switching conditions. However, these transients are often limited by parasitic elements, especially by the source inductance and the parasitic capacitances of the power semiconductor. These limitations cannot be compensated by conventional gate drivers. To overcome this, a novel gate driver approach for power semiconductors was developed. It uses a transformer which accelerates the switching by transferring energy from the source path to the gate path.
Experimental results of the novel gate driver approach show a turn-on energy reduction of 78% (from 80 μJ down to 17 μJ) with a drain-source voltage of 500V and a drain current of 60 A. Furthermore, the efficiency improvement is demonstrated for a hard-switching boost converter. For a switching frequency of 750 kHz with an input voltage of 230V and an output voltage of 400V, it was possible to extend the output power range by 35%(from 2.3kW to 3.1 kW), due to the reduction of the turn-on losses, therefore lowering the junction temperature of the GaN-HEMT.
A gate driver approach is presented for the reduction of turn-on losses in hard switching applications. A significant turn-on loss reduction of up to 55% has been observed for SiCMOSFETs. The gate driver approach uses a transformer which couples energy from the power path back into the gate path during switching events, providing increased gate driver current and thereby faster switching speed.
The gate driver approach was tested on a boost converter running at a switching frequency up to 300 kHz. With an input voltage of 300V and an output voltage of 600V, it was possible to reduce the converter losses by 8% at full load. Moreover, the output power range could be extended by 23% (from 2.75kW to 3.4 kW) due to the reduction of the turn-on losses.
Um einen Funksensor zum Messen der Windgeschwindigkeit per Energy Harvesting mit Energie zu versorgen, bietet es sich an, das Messsignal selbst zur Energiegewinnung zu nutzen. Mit optimierter Funkübertragung und Energiemanagement lässt sich ein autarker Windstärke-Funksensor realisieren, der ab 2 m/s Windgeschwindigkeiten messen und die Messwerte per Funk übertragen kann.
A device including a first and second monitoring unit, the first monitoring unit detecting a first voltage potential and the second monitoring unit detecting a second voltage potential, the monitoring units comparing the first voltage potential and the second voltage potential to the value of the supply voltage and activate a control unit as a function of the comparisons, the control unit determining a switching point in time of a second power transistor, and an arrangement being present which generates current when the second power transistor is being switched on, the current changing the first voltage potential, and the control unit activates a first power transistor when the first voltage potential has the same value as the supply voltage, so that the first power transistor is de-energized.