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This work presents a fully integrated GaN gate driver in a 180nm HV BCD technology that utilizes high-voltage energy storing (HVES) in an on-chip resonant LC tank, without the need of any external capacitor. It delivers up to 11nC gate charge at a 5V GaN gate, which exceeds prior art by a factor of 45-83, supporting a broad range of GaN transistor types. The stacked LC tank covers an area of only 1.44mm², which corresponds to a superior value of 7.6nC/mm².
Multilevel-cell (MLC) flash is commonly deployed in today’s high density NAND memories, but low latency and high reliability requirements make it barely used in automotive embedded flash applications. This paper presents a time domain voltage sensing scheme that applies a dynamic voltage ramp at the cells’ control gate (CG) in order to achieve fast and reliable sensing suitable for automotive applications.
In recent years, significant progress was made on switched-capacitor DCDC converters as they enable fully integrated on chip power management. New converter topologies overcame the fixed input-to-output voltage limitation and achieved high efficiency at high power densities. SC converters are attractive to not only mobile handheld devices with small input and output voltages, but also for power conversion in IoTs, industrial and automotive applications, etc. Such applications need to be capable of handling high input voltages of more than 10V. This talk highlights the challenges of the required supporting circuits and high voltage techniques, which arise for high Vin SC converters. It includes level shifters, charge pumps and back-to-back switches. High Vin conversion is demonstrated in a 4:1 SC DCDC converter with an input voltage as high as 17V with a peak efficiency of 45 %, and a buckboost SC converter with an input voltage range starting from 2 up to 13V, which utilizes a total of 17 ratios and achieves a peak efficiency of 81.5 %. Furthermore a highly integrated micro power supply approach is introduced, which is connected directly to the 120/230 Vrms mains, with an output power of 3mW, resulting in a power density >390μW/mm², which exceeds prior art by a factor of 11.