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This paper presents a wide-Vin step-down parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300-nH resonant coil, placed in parallel to a conventional buck converter. Soft-switching resonant converters are beneficial for high-Vin multi-MHz converters to reduce dominant switching losses, enabling higher switching frequencies. The output filter inductor is optimized based on an empirical study of available inductors. The study shows that faster switching significantly reduces not only the inductor value but also volume, price, and even the inductor losses. In addition, unlike conventional resonant concepts, soft-switching control as part of the proposed PRC eliminates input voltage-dependent losses over a wide operating range, resulting in 76.3% peak efficiency. At Vin = 48 V, a loss reduction of 35% is achieved compared with the conventional buck converter. Adjusting an integrated capacitor array, and selecting the number of oscillation periods, keeps the switching frequency within a narrow range. This ensures high efficiency across a wide range of Vin = 12–48 V, 100–500-mA load, and 5-V output at up to 25-MHz switching frequency. Thanks to the low output current ripple, the output capacitor can be as small
as 50 nF.
A fully passive RFID temperature sensor SoC with an accuracy of ±0.4 ◦C (3σ) from 0 ◦C to 125 ◦C
(2019)
This paper presents a fully passive 13.56 -MHz RFID temperature sensor system-on-chip. Its power management unit operates over a large temperature range using a zero temperature coefficient bias source. On-chip temperature sensing is accomplished with low-voltage, low-power CMOS circuitry, and time-domain signal processing. Two readout commands have been defined to study supply noise sensitivity: 1) standard readout, where just a single set of data is transferred to the reader and 2) serial readout, where several sets of data are sent one after the other to the reader. With the standard readout command, the sensor suffers from interference from the RFID command packet and outputs interference as well, while the sensor outputs no interference with the serial readout command. Measurements show that sensor resolution with serial readout is improved by a factor of approximately 16 compared to standard readout. The chip was fabricated in a standard 0.35-μm CMOS technology and chip-on-board mounted to a tuned RFID transponder coil on an aluminum core FR4 PCB substrate. Real time wireless temperature sensing has been demonstrated with a commercial HF RFID reader. With a two-point calibration, the SoC achieves a 3σ sensing accuracy of ±0.4 ◦C from 0◦C to 125 ◦C.
This paper presents a dc–dc converter for integration in the power management unit of an ultra-low power microcontroller. The converter is designed to significantly reduce the wake-up energy and startup delay of the supplied core. The use of a minimized output capacitor is the key factor to save the wake-up energy. The converter is buffered with only 56 nF and guarantees a stable output of 1.2 V with a voltage ripple smaller than 30 mV. The controller of the proposed dc–dc converter is based on a predictive peak current control that allows the system to control the energy transfer at extremely low power consumption. The proposed circuit is implemented in 130 nm CMOS technology with an area of only 0.14 mm². It achieves a high conversion efficiency of 92.1% and a small quiescent current of 440 nA. It operates from 1.8 to 3.3 V with a maximum load of 2.65 mA.
A highly integrated synchronous buck converter with a predictive dead time control for input voltages >18 V with 10 MHz switching frequency is presented. A high resolution dead time of ˜125 ps allows to reduce dead time dependent losses without requiring body diode conduction to evaluate the dead time. High resolution is achieved by frequency compensated sampling of the switching node and by an 8 bit differential delay chain. Dead time parameters are derived in a comprehensive study of dead time depended losses. This way, the efficiency of fast switching DC-DC converters can be optimized by eliminating the body diode forward conduction losses, minimizing reverse recovery losses and by achieving zero voltage switching. High-speed circuit blocks for fast switching operation are presented including level shifter, gate driver, PWM generator. The converter has been implemented in a 180 nm high-voltage BiCMOS technology.
DMOS transistors are often subject to high power dissipation and thus substantial self-heating. This limits their safe operating area because very high device temperatures can lead to thermal runaway and subsequent destruction. Because the peak temperature usually occurs only in a small region in the device, it is possible to redistribute part of the dissipated power from the hot region to the cooler device areas. In this way, the peak temperature is reduced, whereas the total power dissipation is still the same. Assuming that a certain temperature must not be exceeded for safe operation, the improved device is now capable of withstanding higher amounts of energy with an unchanged device area. This paper presents two simple methods to redistribute the power dissipation density and thus lower the peak device temperature. The presented methods only require layout changes. They can easily be applied to modern power technologies without the need of process modifications. Both methods are implemented in test structures and investigated by simulations and measurements.
The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the presented integrated micropower supply. Connected to the 120/230-VRMS mains, it provides a 3.3-V ac output voltage, suitable for applications such as the Internet-of Things and smart homes. The micropower supply consists of a fully integrated ac–dc and dc–dc converter with one external low-voltage surface mount device buffer capacitor, resulting in an extremely compact size. Fabricated in a low-cost 0.35-μm 700-V complimentary metal-oxide-semiconductor technology, it covers a die size of 7.7 mm². The ac–dc converter is a direct coupled, full-wave rectifier with a subsequent series regulator. The dc–dc stage is a fully integrated capacitive 4:1 converter with up to 17-V input and 47.4% peak efficiency. The power supply comprises several high-voltage control circuits including level shifters and various types of charge pumps (CPs). A source supplied CP is utilized that supports a varying switching node potential. The overall losses are discussed and optimized, including flying capacitor bottom-plate losses. The power supply achieves an output power of 3 mW, resulting in a power density of 390 μW/mm². This exceeds prior art by a factor of 11.
For area reasons, NMOS transistors are preferred over PMOS for the pull-up path in gate drivers. Bootstrapping has to ensure sufficient NMOS gate overdrive. Especially in high-current gate drivers with large transistors, the bootstrap capacitor is too large for integration. This paper proposes three options of fully integrated bootstrap circuits. The key idea is that the main bootstrap capacitor is supported by a second bootstrap capacitor, which is charged to a higher voltage and ensures high charge allocation when the driver turns on. A capacitor sizing guideline and the overall driver implementation including a suitable charge pump for permanent driver activation is provided. A linear regulator is used for bootstrap supply and it also compensates the voltage drop of the bootstrap diode. Measurements from a testchip in 180 nm high-voltage BiCMOS confirm the benefit of high-voltage charge storing. The fully integrated bootstrap circuit with two stacked 75.8 pF and 18.9 pF capacitors results in an expected voltage dip of lower than 1 V. Both bootstrap capacitors require 70% less area compared to a conventional bootstrap circuit. Besides drivers, the proposed bootstrap can also be directly applied to power stages to achieve fully integrated switched mode power supplies or class-D output stages.
Distributed Ledger Technologies for the energy sector: facilitating interoperability analysis
(2023)
The use of distributed data storage and management structures, such as Distributed Ledger Technologies (DLT), in the energy sector has gained great interest in recent times. This opens up new possibilities in e.g. microgrid management, aggregation of distributed resources, peer-to- peer trading, integration of electromobility or proof-of-origin strategies. However, in order to benefit from those new possibilities, new challenges have to be overcome. This work focuses on one of these challenges, which is the need to ensure interoperability when integrating DLT-enabled devices in energy use cases. Firstly, the use of DLTs in the energy sector will be analyzed and the main use cases will be presented. Then, a classification of DLT-Energy use cases will be proposed. Secondly, the need for a common reference architecture framework to analyze those use cases with a focus on interoperability will be discussed and the current activities in research and standardization in this field will be presented. Finally, a new common reference architecture framework based on current activities in standardization will be presented.
Integrated power semiconductors are often used for applications with cyclic on-chip power dissipation. This leads to repetitive self-heating and thermo-mechanical stress, causing fatigue on the on-chip metallization and possibly destruction by short circuits. Because of this, an accurate simulation of the thermo-mechanical stress is needed already during the design phase to ensure that lifetime requirements are met. However, a detailed thermo mechanical simulation of the device, including the on-chip metallization is prohibitively time-consuming due to its complex structure, typically consisting of many thin metal lines with thousands of vias. This paper introduces a two-step approach as a solution for this problem. First, a simplified but fast simulation is performed to identify the device parts with the highest stress. After, precise simulations are carried out only for them. The applicability of this method is verified experimentally for LDMOS transistors with different metal configurations. The measured lifetimes and failure locations correlate well with the simulations. Moreover, a strong influence of the layout of the on-chip metallization lifetime was observed. This could also be explained with the simulation
method.
Methods for increasing the energy efficiency of induction motors by an appropriate control strategy have been a subject of research during the last years. Several methods for loss minimization have been developed for induction motors operated in a steady state. In recent years, some solutions for the dynamic case have been given as well either using an online or offline optimization approach, implying a certain computational burden, which is undesired in practice. This paper shows that the appropriate application of steady state techniques during transients due to a changing motor torque is a suboptimal strategy with an acceptable performance for efficiency optimization given an induction machine where saturation effects of the main inductance must be considered. The optimization problem is simplified such that a simple suboptimal solution is possible and the quality of the suboptimal solution is investigated by simulations and measurements. The proposed solution is simple, easy to implement, and does not require an online optimization. In addition, the influence of magnetizing induction saturation is considered.