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Die Erfindung betrifft eine Vorrichtung (100) und ein Verfahren zum elektrischen Verbinden und Trennen zweier elektrischer Potentiale (1, 2). Des Weiteren betrifft die Erfindung eine Verwendung der Vorrichtung (100). Dabei umfasst die Vorrichtung (100): – ein erstes Modul, welches einen ersten und einen zweiten Transistor (10a, 10b) umfasst, wobei der erste Transistor (10a) antiseriell zu dem zweiten Transistor (10b) geschaltet ist; und – ein zweites Modul, welches einen dritten und einen vierten Transistor (10c, 10d) umfasst, wobei der dritte Transistor (10c) antiseriell zu dem vierten Transistor (10d) geschaltet ist; wobei das erste Modul und das zweite Modul parallel geschaltet sind.
Gallium nitride high electron mobility transistors (GaN-HEMTs) have low capacitances and can achieve low switching losses in applications where hard turn-on is required. Low switching losses imply a fast switching; consequently, fast voltage and current transients occur. However, these transients can be limited by package and layout parasitics even for highly optimized systems. Furthermore, a fast switching requires a fast charging of the input capacitance, hence a high gate current.
In this paper, the switching speed limitations of GaN-HEMTs due to the common source inductance and the gate driver supply voltage are discussed. The turn-on behavior of a GaN-HEMT is simulated and the impact of the parasitics and the gate driver supply voltage on the switching losses is described in detail. Furthermore, measurements are performed with an optimized layout for a drain-source voltage of 500 V and a drain-source current up to 60 A.
A device including a first and second monitoring unit, the first monitoring unit detecting a first voltage potential and the second monitoring unit detecting a second voltage potential, the monitoring units comparing the first voltage potential and the second voltage potential to the value of the supply voltage and activate a control unit as a function of the comparisons, the control unit determining a switching point in time of a second power transistor, and an arrangement being present which generates current when the second power transistor is being switched on, the current changing the first voltage potential, and the control unit activates a first power transistor when the first voltage potential has the same value as the supply voltage, so that the first power transistor is de-energized.
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switching transients under hard-switching conditions. However, these transients are often limited by parasitic elements, especially by the source inductance and the parasitic capacitances of the power semiconductor. These limitations cannot be compensated by conventional gate drivers. To overcome this, a novel gate driver approach for power semiconductors was developed. It uses a transformer which accelerates the switching by transferring energy from the source path to the gate path.
Experimental results of the novel gate driver approach show a turn-on energy reduction of 78% (from 80 μJ down to 17 μJ) with a drain-source voltage of 500V and a drain current of 60 A. Furthermore, the efficiency improvement is demonstrated for a hard-switching boost converter. For a switching frequency of 750 kHz with an input voltage of 230V and an output voltage of 400V, it was possible to extend the output power range by 35%(from 2.3kW to 3.1 kW), due to the reduction of the turn-on losses, therefore lowering the junction temperature of the GaN-HEMT.
The presented wide-Vin step-down converter introduces a parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300 nH resonant coil, placed in parallel to a conventional buck converter. Unlike conventional resonant concepts, the implemented soft-switching control eliminates input voltage dependent losses over a wide operating range. This ensures high efficiency across a wide range of Vin= 12-48V, 100-500mA load and 5V output at up to 15MHz switching frequency. The peak efficiency of the converter is 76.3 %. Thanks to the low output current ripple, the output capacitor can be as small as 50 nF, while the inductor tolerates a larger ESR, resulting in small component size. The proposed PRC architecture is also suitable for future power electronics applications using fast-switching GaN devices.
More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ~10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ~15V for Si.
Modern power transistors are able to switch at very high transition speed, which can cause EMC violations and overshoot. This is addressed by a gate driver with variable gate current, which is able to control the transition speed. The key idea is that the gate driver can influence the di/dt and dv/dt transition separately and optimize whichever transition promises the highest improvement while keeping switching losses low. To account for changes in the load current, supply voltage, etc., a control loop is required in the driver to ensure optimized switching. In this paper, an efficient control scheme for an automotive gate driver with variable output current capability is presented. The effectiveness of the control loop is demonstrated for a MOSFET bridge consisting of OptiMOS-T2™devices with a total gate charge of 39nC. This bridge setup shows dv/dt transitions between 50 to 1000ns, depending on driving current. The driver is able to switch between gate current levels of 1 to 500mA in 10/15ns (rising/falling transition). With the implemented control loop the driver is measured to significantly reduce the ringing and thereby reduce device stress and electromagnetic emissions while keeping switching losses 52% lower than with a constant current driver.
A concept for a slope shaping gate driver IC is proposed, used to establish control over the slew rates of current and voltage during the turn-on and turn off switching transients.
It combines the high speed and linearity of a fully-integrated closed-loop analog gate driver, which is able to perform real-time regulation, with the advantages of digital control, like flexibility and parameter independency, operating in a predictive cycle-bycycle regulation. In this work, the analog gate drive integrated circuit is partitioned into functional blocks and modeled in the small-signal domain, which also includes the non-linearity of parameters. An analytical stability analysis has been performed in order to ensure full functionality of the system controlling a modern generation IGBT and a superjunction MOSFET. Major parameters of influence, such as gate resistor and summing node capacitance, are investigated to achieve stable control. The large-signal behavior, investigated by simulations of a transistor level design, verifies the correct operation of the circuit. Hence, the gate driver can be designed for robust operation.