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We present a topology of MIMO arrays of inductive antennas exhibiting inherent high crosstalk cancellation capabilities. A single layer PCB is etched into a 3-channels array of emitting/receiving antennas. Once coupled with another similar 3-channels emitter/receiver, we measured an Adjacent Channel Rejection Ratio (ACRR) as high as 70 dB from 150 Hz to 150 kHz. Another primitive device made out of copper wires wound around PVC tubes to form a 2-channels “non-contact slip-ring” exhibited 22 dB to 47 dB of ACRR up to 15MHz. In this paper we introduce the underlying theoretical model behind the crosstalk suppression capabilities of those so-called “Pie-Chart antennas”: an extension of the mutual inductance compensation method to higher number of channels using symmetries. We detail the simple iterative building process of those antennas, illustrate it with numerical analysis and evaluate there effectiveness via real experiments on the 3-channels PCB array and the 2-channels rotary array up to the limit of our test setup. The Pie Chart design is primarily intended as an alternative solution to costly electronic filters or cumbersome EM shields in wireless AND wired applications, but not exclusively.
This work presents a spiral antenna array, which can be used in the V- and W-Band. An array equipped with Dolph-Chebychev coefficients is investigated to address issues related to the low gain and side lobe level of the radiating structure. The challenges encountered in this achievement are to provide an antenna that is not only good matched but also presents an appreciable effective bandwidth at the frequency bands of interest. Its radiation properties including the effective bandwidth and the gain are analyzed for the W-Band.
Integrated power semiconductors are often used for applications with cyclic on-chip power dissipation. This leads to repetitive self-heating and thermo-mechanical stress, causing fatigue on the on-chip metallization and possibly destruction by short circuits. Because of this, an accurate simulation of the thermo-mechanical stress is needed already during the design phase to ensure that lifetime requirements are met. However, a detailed thermo mechanical simulation of the device, including the on-chip metallization is prohibitively time-consuming due to its complex structure, typically consisting of many thin metal lines with thousands of vias. This paper introduces a two-step approach as a solution for this problem. First, a simplified but fast simulation is performed to identify the device parts with the highest stress. After, precise simulations are carried out only for them. The applicability of this method is verified experimentally for LDMOS transistors with different metal configurations. The measured lifetimes and failure locations correlate well with the simulations. Moreover, a strong influence of the layout of the on-chip metallization lifetime was observed. This could also be explained with the simulation
method.
The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event. However, this implies that the power distribution is homogeneous and that no current filamentation has to be considered. Therefore, this work investigates this assumption by evaluating the stability of a SiC-MOSFET over a wide range of operation conditions by measurements up to destruction, thermal simulations, and high-temperature characterization.
This paper addresses the turn-on switching process of insulated-gate bipolar transistor (IGBT) modules with anti-parallel free-wheeling diodes (FWD) used in inductive load switching power applications. An increase in efficiency, i.e. decrease in switching losses, calls for a fast switching process of the IGBT, but this commonly implies high values of the reverse-recovery current overshoot. To overcome this undesired behaviour, a solution was proposed which achieves an independent control of the collector current slope and peak reverse recovery current by applying a gate current that is briefly turned negative during the turn-on process. The feasibility of this approach has already been shown, however, a sophisticated control method is required for applying it in applications with varying currents, temperature and device parameters. In this paper a solution based on an adaptive, iterative closed-loop ontrol is proposed. Its effectiveness is demonstrated by experimental results from a 1200 V/200A IGBT power module for different load currents and reverse-recovery current overshoots.
Induced by a societal decision to phase out conventional energy production - the so-called Energiewende (energy transition) - the rise of distributed generation acts as a game changer within the German energy market. The share of electricity produced from renewable resources increased to 31,6% in 2015 (UBA, 2016) with a targeted share of renewable resources in the electricity mix of 55%-60% in 2035 (RAP, 2015), opening perspectives for new products and services. Moreover, the rapidly increasing degree of digitization enables innovative and disruptive business models in niches at the grid's edge that might be the winners of the future. It also stimulates the market entry of newcomers and competitors from other sectors, such as IT or telecommunication, challenging the incumbent utilities. For example, virtual and decentral market places for energy are emerging; a trend that is likely to speed up considerably by blockchain technology, if the regulatory environment is adjusted accordingly. Consequently, the energy business is turned upside down, with customers now being at the wheel. For instance, more than one-third of the renewable production capacities are owned by private persons (Trendsearch, 2013). Therefore, the objective of this chapter is to examine private energy consumer and prosumer segments and their needs to derive business models for the various decentralized energy technologies and services. Subsequently, success factors for dealing with the changing market environment and consequences of the potentially disruptive developments for the market structure are evaluated.
Entwicklung eines Portfolios von Energieeffizienzdienstleistungen für kommunale EVU. - Kurzfassung
(2016)
Disclosed is an electronic drive circuit and a drive method. The drive circuit includes an output; a first output transistor comprising a control node and a load path, wherein the load path is coupled between the output and a first supply node; a voltage regulator configured to control a voltage across the load path of the first output transistor; and a first driver configured to drive the first output transistor based on a first control signal.
Pegelumsetzer mit einem ersten Eingang, der ein erstes Signal erfasst, wobei das erste Signal einen ersten Spannungspegel aufweist, einem Ausgang, der ein zweites Signal erzeugt, wobei das zweite Signal einen zweiten Spannungspegel aufweist, wobei der zweite Spannungspegel größer als der erste Spannungspegel ist und einem Differenzverstärker, der eine Differenzspannung erfasst, wobei der Differenzverstärker mit einer Versorgungsspannung und einer hochseitige Masse verbunden ist, wobei die Versorgungsspannung ein erstes Spannungspotential und die hochseitige Masse ein zweites Spannungspotential aufweist, dadurch gekennzeichnet, dass der erste Eingang mit einer ersten Teilschaltung verbunden ist, wobei die erste Teilschaltung mit einer zweiten Teilschaltung unidirektional verbunden ist, wobei die zweite Teilschaltung mit der Versorgungsspannung und der hochseitigen Masse verbunden ist, wobei die zweite Teilschaltung mindestens zwei Ausgänge aufweist, die die Differenzspannung des Differenzverstärkers erzeugen, wobei über einen Versorgungsspannungseingang und einen hochseitigen Masseeingang eine zusätzliche Spannung einkoppelt und der Differenzverstärker das zweite Signal in Abhängigkeit der Differenzspannung, der Versorgungsspannung, der hochseitigen Masse und der zusätzlichen Spannung erzeugt.