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DMOS transistors are often subject to high power dissipation and thus substantial self-heating. This limits their safe operating area because very high device temperatures can lead to thermal runaway and subsequent destruction. Because the peak temperature usually occurs only in a small region in the device, it is possible to redistribute part of the dissipated power from the hot region to the cooler device areas. In this way, the peak temperature is reduced, whereas the total power dissipation is still the same. Assuming that a certain temperature must not be exceeded for safe operation, the improved device is now capable of withstanding higher amounts of energy with an unchanged device area. This paper presents two simple methods to redistribute the power dissipation density and thus lower the peak device temperature. The presented methods only require layout changes. They can easily be applied to modern power technologies without the need of process modifications. Both methods are implemented in test structures and investigated by simulations and measurements.
DMOS transistors often suffer from substantial self-heating during high power dissipation, which can lead to thermal destruction if the device temperature reaches excessive values. A successfully demonstrated method to reduce the peak temperature is the redistribution of power dissipation density from the hotter to the cooler device areas by careful layout modification. However, this is very tedious and time-consuming if complex-shaped devices as often found in industrial applications are considered.
This paper presents an approach for fully automatic layout optimization which requires only a few hours processing time. The approach is applied to complex shaped test structures which are investigated by measurements and electro-thermal simulations. Results show a significantly lower peak temperature and an energy capability gain of 84 %, offering potential for a 18 % size reduction of active area.
We present a compact battery charger topology for weight and cost sensitive applications with an average output current of 9A targeted for 36V batteries commonly found in electric bicycles. Instead of using a conventional boost converter with large DC-link capacitors, we accomplish PFC-functionality by shaping the charging current into a sin²-shape. In addition, a novel control scheme without input-current sensing is introduced. A-priori knowledge is used to implement a feed-forward control in combination with a closed-loop output current control to maintain the target current. The use of a full-bridge/half bridge LLC converter enables operation in a wide input-voltage range.
A fully featured prototype has been built with a peak output power of 1050W. An average output power of 400W was measured, resulting in a power density of 1.8 kW/dm³. At 9A charging current, a power factor of 0.96 was measured and the efficiency exceeds 93% on average with passive rectification.
The impact of pulse charging has been evaluated on a 400Wh battery which was charged with the proposed converter as well as CC-CV-charging for reference. Both charging schemes show similar battery surface temperatures.
The Dual Active Bridge (DAB) is a very promising topology for future power converters. However, careless operation can lead to a DC component in the transformer current. The problem is further exacerbated when the phase shift changes during operation. This work presents a study of DC bias effects on the DAB with special regard to transient effects introduced by sudden shifts in the output load. We present a simple yet effective approach to avoid DC bias entirely.
This paper presents an efficient implementation of a reconfigurable battery stack which allows full exploitation of the capacity of every single cell. Contrary to most other approaches, it is possible to electrically remove one or more cells from the battery stack. Therefore, the overall capacity of the system is not restricted by the weaker cells, and cells with very different states of health can be used, making the system very attractive for refurbished batteries. For the required switches, low-voltage high-current MOSFETs are used. A demonstrator has been built with a total capacity of up to 3.5 kWh, a nominal voltage of 35 V, and currents up 200 A.
A novel configuration of the dual active bridge (DAB) DC/DC converter is presented, enabling more efficient wide voltage range conversion at light loads. A third phase leg as well as a center tapped transformer are introduced to one side of the converter. This concept provides two different turn ratios, thus extending the zero voltage switching operation resulting in higher efficiency. A laboratory prototype was built converting an input voltage of 40V to an output voltage in the range of 350V to 650V. Measurements show a significant increase up to 20% in the efficiency for light-load operation.
This paper presents a control strategy for optimal utilization of photovoltaic (PV) generated power in conjunction with an Energy Storage System (ESS). The ESS is specifically designed to be retrofitted into existing PV systems in an end-user application. It can be attached in parallel to the PV system and connects to existing DC/AC inverters. In particular, the study covers the impact such a modification has on the output power of existing PV panels. A distinct degradation of PV output power was found due to the different power characteristics of PV panel and ESS. To overcome such degradation a novel feedback system is proposed. The feedback system continuously modifies the power characteristic of the ESS to match the PV panel and thus achieves optimal power utilization. Impact on PV and power point tracking performance is analyzed. Simulation of the proposed system is performed in MATLAB/Simulink. The results are found to be satisfactory.
We present a dual active bridge topology suitable for wide voltage range applications covering all combinations of 200V to 600V on the input and 20V to 60V on the output with constant power of 1kW.We employ a stepped inductance scheme to adjust the effective inductance of the converter, thus extending the efficient operation range. Using a variable switching frequency between 35 kHz and 150 kHz with operation-point-dependent limits further increases the performance of the converter. A prototype was built and the proposed changes have been compared to a fixed frequency, fixed inductance implementation. Measurements show a maximum loss reduction of 40 %, leading to a peak efficiency of 97% while maintaining constant output power over the entire working area.
The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event. However, this implies that the power distribution is homogeneous and that no current filamentation has to be considered. Therefore, this work investigates this assumption by evaluating the stability of a SiC-MOSFET over a wide range of operation conditions by measurements up to destruction, thermal simulations, and high-temperature characterization.
This work investigates the electro-thermal behavior and failure mechanism of a 600V depletion-mode GaN HEMT by experimental analysis and numerical thermal simulations. For this device, the positive temperature coefficient of the draingate leakage current can lead to the formation of hot spots. This localized thermal runaway which ultimately results in a breakdown of the inherent drain-gate junction is found to be the dominant cause of failure.
In this work we investigate the behavior of MIS- and Schottky-gate AlGaN/GaN HEMTs under high-power pulsestress. A special setup capable of applying pulses of constant power is used to evaluate the electro-thermal response in different operating points. For both types of devices, the time to failure was found to decrease with increasing drain-source voltage. Overall, the Schottky-gate device displays a higher pulse robustness. The pulse withstand time of the MIS-gate device is limited by the occurrence of a thermal instability at approximately 240°C while the Schottky-gate device displays a rapid increase of the gate leakage current prior to failure. The mechanism responsible for this gate current is further investigated by static and transient temperature measurements and yielded activation energies of 0.6 eV and 0.84 eV.
This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500°C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
In many automotive applications, repetitive selfheating is the most critical operation condition for LDMOS transistors in smart power ICs. This is attributed to thermomechanical stress in the on-chip metallization, which results from the different thermal expansion coefficients of the metal and the intermetal dielectric. After many cycles, the accumulated strain in the metallization can lead to short circuits, thus limiting the lifetime. Increasing the LDMOS size can help to lower peak temperatures and therefore to reduce the stress. The downside of this is a higher cost. Hence, it has been suggested to use resilient systems that monitor the LDMOS metallization and lower the stress once a certain level of degradation is reached. Then, lifetime requirements can be fulfilled without oversizing LDMOS transistors, even though a certain performance loss has to be accepted. For such systems, suitable sensors for metal degradation are required. This work proposes a floating metal line embedded in the LDMOS metallization. The suitability of this approach has been investigated experimentally by test structures and shown to be a promising candidate. The obtained results will be explained by means of numerical thermo-mechanical simulations.
DMOS transistors in integrated smart power technologies are often subject to cyclic power dissipation with substantial selfheating. This leads to repetitive thermo mechanical stress, causing fatigue of the on-chip metallization and limiting the lifetime. Hence, most designs use large devices for lower peak temperatures and thus reduced stress to avoid premature failures.
However, significantly smaller DMOS transistors are acceptable if the system reverts to a safer operating condition with lower stress when a failure is expected to occur in the near future. Hence, suitable early-warning sensors are required. This paper proposes a floating metal meander embedded between DMOS source and drain to detect an impending metallization failure. Measurement results of several variants will be presented and discussed, investigating their suitability as early warning indicators.
LDMOS transistors in integrated power technologies are often subject to thermo-mechanical stress, which degrades the on-chip metallization and eventually leads to a short. This paper investigates small sense lines embedded in the LDMOS metallization. It will be shown that their resistance depends strongly on the stress cycle number. Thus, they can be used as aging sensors and predict impending failures. Different test structures have been investigated to identify promising layout configurations. Such sensors are key components for resilient systems that adaptively reduce stress to allow aggressive LDMOS scaling without increasing the risk of failure.
On-chip metallization, especially in modern integrated BCD technologies, is often subject to high current densities and pronounced temperature cycles due to heat dissipation from power switches like LDMOS transistors. This paper continues the work on a sensor concept where small sense lines are embedded in the metallization layers above the active area of a switching LDMOS transistor. The sensors show a significant resistance change that correlates with the number of power cycles. Furthermore, influences of sense line layer, geometry and the dissipated energy are shown. In this paper, the focus lies on a more detailed analysis of the observed change in sense line resistance.
In this work, a brushless, harmonic-excited wound-rotor synchronous machine is investigated which utilizes special stator and rotor windings. The windings magnetically decouple the fundamental torque-producing field from the harmonic field required for the inductive power transfer to the field coil. In contrast to conventional harmonic-excited synchronous machines, the whole winding is utilized for both torque production and harmonic excitation such that no additional copper for auxiliary windings is needed. Different rotor topologies using rotating power electronic components are investigated and their efficiencies have been compared based on Finite-Element calculation and circuit analysis.
A novel brushless excitation concept for synchronous machines with a rotating power converter is proposed in this paper. The concept does not need an auxiliary winding or any other modification to the machine structure apart from an inverter with a DC link capacitor and a controller on the rotor. The power required for the rotor excitation is provided by injecting harmonics into the stator winding. Thus, a voltage in the field coil is induced. The rotor inverter is controlled such that the alternating current charges the DC link capacitor. At the same time the inverter supplies the DC field current to the field coil. The excitation concept is first developed in theory, then presented using an analytical model and FEA, and lastly investigated with a prelimininary experimental setup.